Provided are a thin-film solar cell module structure and a method of manufacturing the same.

A coated glazing comprising: a transparent glass substrate, wherein a surface of the substrate is directly or indirectly coated with at least one layer based on a transparent conductive coating (TCC) and/or at least one layer based on a material with a refractive index of at least 1.75, and wherein said surface has an arithmetical mean height of the surface value, Sa, of at least 0.4 nm prior to said coating of said surface.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.

The embodiment provides a transparent electrode having low resistance and high stability against impurities such as halogen and sulfur, a method of producing the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode according to an embodiment includes a transparent substrate and a plurality of conductive regions disposed on a surface of the transparent substrate and separated from each other by a separation region, wherein the conductive region has a structure in which a first transparent conductive metal oxide layer, a metal layer, and a second transparent conductive metal oxide layer are laminated in this order from the substrate side, and in the separation region, there is disposed a trapping material. This transparent electrode can be produced by scribing the conductive region to form a separation region, and then using a halide or a sulfur compound.

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

The present disclosure provides a processing method for a photovoltaic cell and a string welding and curing device for a photovoltaic cell. The method includes step S1: plating both side surfaces of a monocrystalline silicon wafer; Step S2: forming a first electrode on one side surface of the plated monocrystalline silicon wafer; Step S3: forming a second electrode on the other side surface of the plated monocrystalline silicon wafer, to form a cell sheet; and Step S4: string welding a plurality of cell sheets and at the same time, curing the first electrode and the second electrode, by using a string welding and curing device for a photovoltaic cell. With the processing method provided by the present disclosure, the electrodes on the cell sheets can be cured while the cell sheets are string welded. It can save resources, shorten the processing time of the photovoltaic cell, and improve the production efficiency.

The present disclosure relates to a thin-film solar cell capable of independently adjusting transparency and color, which is capable of selectively controlling transmittance while independently adjusting external and internal colors within a range in which degradation of photoelectric conversion efficiency is minimized, and a method of manufacturing the same, and the thin-film solar cell capable of independently adjusting transparency and color according to the present disclosure includes a structure in which a back transparent electrode, a light absorption layer, a front transparent electrode, and a front color layer are sequentially stacked on a transparent substrate, in which a light transmission part region, to which the back transparent electrode is exposed, is formed by removing the front color layer, the front transparent electrode, and the light absorption layer.

A preparation method of a heterojunction solar cell is provided. The method includes the following steps of: sequentially forming an intrinsic layer, forming a doped silicon layer, forming a transparent conductive film layer, forming a metal thin layer and forming an electrode layer on at least one side of a crystalline silicon substrate. A heterojunction solar cell is also provided.