A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Disclosed are an array substrate and a preparation method thereof, and a digital microfluidic chip. The preparation method includes: forming a plurality of photoelectric detection devices on a silicon-based substrate; transferring the photoelectric detection devices to a base substrate by adopting a micro transfer printing process; and forming a plurality of transparent driving electrodes on the base substrate, wherein the transparent driving electrodes are insulated from the photoelectric detection devices.

A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.

There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (“ELO”) process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh-efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.

The present disclosure describes a solar cell that in one embodiment includes a substrate having a first thermal expansion coefficient; and a strain balancing layer on a surface of the substrate having a second thermal expansion greater than the first thermal expansion coefficient. The solar cell further includes a solder bonding layer on a surface of the strain balancing layer to position the strain balancing layer between the solder bonding layer and the supporting substrate. The solar cell further includes a semiconductor junction having a bonded surface on the solder bonding layer that is opposite the surface of the solder bonding layer engaged to the strain balancing layer.

A transparent multi-layer assembly includes a transparent carrier structure comprising a polymer material and an electrically conductive transparent layer comprising an electrically conductive oxide. A silicon carbide layer is arranged as an adhesion promoter between the transparent carrier structure and the electrically conductive transparent layer.

The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

An n-type semiconductor layer (102), a multiplication layer (103), an electric field control layer (104), a light absorption layer (105), and a p-type semiconductor layer (106) are formed on a growth substrate (101), and the p-type semiconductor layer (106) is adhered on a transfer substrate (107). After that, the growth substrate (101) is removed, and the n-type semiconductor layer (102) is processed to have an area smaller than that of the multiplication layer (103).

A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that the first and second contact materials form an electrically conductive contact structure through the semiconductor body. Furthermore, an optoelectronic semiconductor component with a contact structure is specified.