Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

A photodetection film includes a photodetection transistor. The photodetection transistor includes a gate electrode, a gate insulating layer surroundingly formed on the gate electrode, at least one drain terminal disposed on the gate insulating layer and is spaced apart from the gate electrode, at least one source terminal disposed on the gate insulating layer and is spaced apart from the gate electrode and the at least one drain terminal, and a light-absorbing semiconductor layer disposed on the gate insulating layer and extends between the drain and source terminals. A photodetection sensor, a photodetection display apparatus, and a method of making the photodetection film are also disclosed.

A method for treating a stack, the stack including a substrate of crystalline silicon, a first passivation layer of hydrogenated amorphous silicon, disposed on a first face of the substrate; and a first layer of n-doped amorphous silicon, disposed on the first passivation layer; the method including a step of exposing the stack to electromagnetic radiation emitted by an electromagnetic radiation source, the first face of the substrate pointing to the electromagnetic radiation source, the electromagnetic radiation having at least one first wavelength of between 300 nm and 550 nm and at least one second wavelength of between 550 nm and 1100 nm.

A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a second doped region and a channel region, the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer. The photosensitive transistor includes a main region and opening regions, and the opening regions are located at a periphery of the main region. The first electrode and the second electrode are in the same layer and insulated from each other and both surround the main region. The second semiconductor layer includes a main body portion located in the main region and auxiliary portions located in the opening regions.

The present invention relates to a method of production of silicon heterojunction solar cells having at least one stabilization step, wherein the stabilization step is performed after amorphous silicon layers, and preferably also transparent layers or even metallic contact materials, have already been applied beforehand to crystalline silicon solar wafers. The problem addressed by the invention consists in finding an efficient stabilization step which permits high solar cell efficiencies. The problem is solved by a method of production of silicon heterojunction solar cells in which the stabilization step comprises heating the solar cell to temperatures above 200° C. and illumination from a light source, wherein the light source emits light in a wavelength range <2 500 nm and wherein one of the light doses emitted by the light source is in excess of 8 000 Ws/m.sup.2.

The invention relates to a high yield multistage light-to-electricity multiplying platform unit which is provided on its front face with a protection antireflection coating or layer (1) and with an upper electrode layer (5) characterized in that it comprises: an opto-phonic platform composed of a UV radiation light-to-light down converter (2) to a particular sub-band in the visible radiation domain, a harvesting diffractive grading component (3) including an electronic passivation layer (4) and with light splitting means and one or more sub-band light into narrowed sub-band light concentration converter(s), a IR radiation up conversion dedicated light converter, a converting multiplying platform made of several optimal for each narrowed and concentrated sub-band light-to-electricity multiplying converters. A digital optical light management layer on the top, collects, filters, splits and concentrates sunlight into sub-bands and to project them onto dedicated light-to-electricity preferentially all-silicon converters with low-energy multiplication capacity. The UV wavelengths are absorbed and down-converted within the top nanolayer of the platform. The other spectral components of the solar light are transmitted by this top nanolayer, guided to the dedicated panel area and focused on adjusted converters.

A heterojunction battery, a preparation method therefor, and an application thereof are provided. The heterojunction battery includes a substrate, a first intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a first transparent conductive oxide layer, a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a second transparent conductive oxide layer, and a dielectric film. The heterojunction battery further includes a metal mesh. The metal mesh penetrates through the dielectric film and is fixedly connected to the first transparent conductive oxide layer and the second transparent conductive oxide layer, respectively. The metal mesh is composed of multiple first metal wires and multiple second metal wires. The first metal wires are perpendicular to the second metal wires.

Provided is a solar cell and a method for manufacturing the same, the method includes: forming a doped layer on a surface of a semiconductor substrate, the doped layer having a first doping concentration of a doping element in the doped layer; depositing, on a surface of the doped layer, a doped amorphous silicon layer including the doping element; selectively removing at least one region of the doped amorphous silicon layer; performing annealing treatment, for the semiconductor substrate to form a lightly doped region having the first doping concentration and a heavily doped region having a second doping concentration in the doped layer, the second doping concentration is greater than the first doping concentration; and forming a solar cell by post-processing the annealed semiconductor substrate. The solar cell and the method for manufacturing the same simplify the manufacturing process and improve conversion efficiency of the solar cell.

Provided is a solar cell and a method for manufacturing the same, the method includes: forming a doped layer on a surface of a semiconductor substrate, the doped layer having a first doping concentration of a doping element in the doped layer; depositing, on a surface of the doped layer, a doped amorphous silicon layer including the doping element; selectively removing at least one region of the doped amorphous silicon layer; performing annealing treatment, for the semiconductor substrate to form a lightly doped region having the first doping concentration and a heavily doped region having a second doping concentration in the doped layer, the second doping concentration is greater than the first doping concentration; and forming a solar cell by post-processing the annealed semiconductor substrate. The solar cell and the method for manufacturing the same simplify the manufacturing process and improve conversion efficiency of the solar cell.

Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.