The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.

A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.

A crystalline silicon-based solar cell includes, in the following order, a crystalline silicon substrate having a first principal surface, a non-single-crystalline silicon-based thin-film, and a transparent electroconductive layer. The non-single-crystalline silicon-based thin-film and the transparent electroconductive layer are disposed on the first principal surface. The non-single-crystalline silicon-based thin-film comprises, in the following order from the first principal surface, an intrinsic silicon-based thin-film and a conductive silicon-based thin-film. The first principal surface has a plurality of pyramidal projections, each having a top portion, a middle portion, and a bottom portion. A thickness of the non-single-crystalline silicon-based thin-film disposed on the top portions is smaller than a thickness of the non-single-crystalline silicon-based thin-film disposed on the middle portions.

A photoelectric detection structure, a manufacturing method therefor, and a photoelectric detector. The photoelectric detection structure includes: a base substrate; an electrode strip, which is located on the base substrate; a semiconductor layer, which is located at a side of the base substrate that faces the electrode strip; an insulating layer, which is located between the electrode strip and the semiconductor layer, the insulating layer including a thickness-increased portion, and the thickness-increased portion being located on at least one edge of the electrode strip.

A resist composition for pattern printing contains a resin (A) component that contains a combination of at least two or more types of amino group-containing resins each containing an amino group of different amine numbers respectively, the entire resin (A) component having an amine number of 1.5 to 10.0, a compound (B) component that generates an amine by means of moisture and/or light, a thickener (C) component, and a diluent (D) component. The resist composition has high resistance to an alkaline etchant, can be easily peeled off by an aqueous acid solution, and enables a protective pattern to be formed by printing.

Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.

The present disclosure provides a method and system for manufacturing solar cells and shingled solar cell modules. The method as provided by the present disclosure includes performing scribing and dividing of the solar cells, sorting the obtained solar cell strips, and packaging the cell strips in the solar cell manufacturing process. The solar cell strips can be assembled directly after dismantling the package in the solar module manufacturing process. Therefore, the method can accomplish a smooth flow of manufacturing solar cells and shingled solar cell modules, reduce repeated processing steps, lower the risk of cracking and costs thereof, and optimize the current matching and the color consistency of the cell strips in the shingled solar cell modules.

The present disclosure provides a method and system for manufacturing solar cells and shingled solar cell modules. The method as provided by the present disclosure includes performing scribing and dividing of the solar cells, sorting the obtained solar cell strips, and packaging the cell strips in the solar cell manufacturing process. The solar cell strips can be assembled directly after dismantling the package in the solar module manufacturing process. Therefore, the method can accomplish a smooth flow of manufacturing solar cells and shingled solar cell modules, reduce repeated processing steps, lower the risk of cracking and costs thereof, and optimize the current matching and the color consistency of the cell strips in the shingled solar cell modules.

A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.