The present application relates to an organic solar cell including: a first electrode; a second electrode which is disposed to face the first electrode; and an organic material layer having one or more layers which includes a photoactive layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layer include two or more regions having different thicknesses.

A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum.

The invention relates to a method for producing a thin film solar cell module and thin film solar cell module thus produces. The method comprises the steps of forming a multi-layer structure (100) of multiple electrically interconnected thin film solar cells (1) on a substrate (2), the multi-layer structure comprising a back contact layer (10), a photovoltaic active layer (11), and a front contact layer (13); and forming a conductive grid (3) underneath or onto the front contact layer by depositing a conductive material through a mask (4) before or after forming the front contact layer (13), by moving the substrate (2) and the mask (4) with respect to a deposition source (5) of the conductive material.

The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and introducing gas into the hollow space; a cooling device for cooling the process box housing section coupleable to the cooling device; at least one loading/unloading unit for loading and/or unloading the process box; at least one heating unit for heating the substrate in the process box; at least one cooling unit for cooling the substrate in the process box; at least one pumping-out device for draining the hollow space of the process box; at least one gas supply device for supplying the hollow space of the process box with at least one gas; at least one transport mechanism, which is implemented for the purpose of executing a relative movement between, on the one hand, the process box and, on the other, the heating, cooling, and loading/unloading unit.

A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a stain etching process, which retrofits existing tools for junction isolation and Phosphorus Silicon Glass (PSG) etch in solar cell manufacturing. The retrofitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etch, antireflection coating, and passivation of the front surface of the solar cell.

A display includes a plurality of pixel chips, chixels, provided on a substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a seamless look between adjacent display modules. The substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

A deposition system and method for depositing a uniform film of a chalcogen-containing compound semiconductor are provided. The deposition system includes a vacuum enclosure connected to a vacuum pump, a sputtering system comprising at least one sputtering target located in the vacuum enclosure, a chalcogen-containing gas source, and a gas distribution manifold having a supply side and a distribution side. The distribution side has a plurality of opening regions having independent temperature control and the supply side is connected to the chalcogen-containing gas source. A method of reactive sputter depositing a chalcogen-containing compound semiconductor material includes sputtering at least one metal component of the chalcogen-containing compound semiconductor material onto the substrate, and providing a higher chalcogen flux to ends of the substrate than to a middle of the substrate to form the chalcogen-containing compound semiconductor material.