An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

In one aspect, a preparation method for a solar cell includes: forming a target amorphous silicon layer on a side of a silicon wafer using a preset process, and then performing an annealing treatment on the target amorphous silicon layer to convert the target amorphous silicon layer into a target polycrystalline silicon layer, wherein the preset process includes at least one cycle period, the at least one cycle period comprises: depositing a target amorphous silicon preformed layer with a preset thickness and performing a hydrogen gas plasma treatment on the target amorphous silicon preformed layer, wherein the preset thickness of the target amorphous silicon preformed layer is less than or equal to a thickness of the target amorphous silicon layer. This method can effectively improve a crystallization rate of converting amorphous silicon into polycrystalline silicon, improving field passivation performance and contact performance of the solar cell.

A preparation method of a heterojunction solar cell includes following steps: depositing a first passivation layer on a first surface of a silicon substrate by using a gas source, a base material of the first passivation layer being hydrogenated amorphous silicon; during depositing hydrogenated amorphous silicon of the first passivation layer, allowing the gas source to gradually incorporate carbon dioxide, and controlling a proportion of carbon dioxide in the gas source to gradually increase with increase of a thickness of the first passivation layer which has been deposited.

The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconductor layer.

A solar cell includes: a semiconductor substrate including an uneven portion, the uneven portion being located on at least one of a front surface or a rear surface of the semiconductor substrate; a passivation layer disposed on the uneven portion; and an oxide layer disposed between the passivation layer and the uneven portion of the semiconductor substrate, the oxide layer including amorphous oxide.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).

The present disclosure is directed to a method of processing a solar cell device. The method comprises detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein. A deposition pattern is determined based on the location of the at least one inconsistency. A material is selectively deposited on the substrate according to the deposition pattern.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

The present application discloses a zinc oxide-crystalline silicon laminated solar cell and a preparation method thereof, relates to the technical field of solar cells, and aims to solve the technical problem of low photoelectric conversion rate of existing solar cells. The zinc oxide-crystalline silicon laminated solar cell includes: a P-type silicon substrate layer; a front surface of the P-type silicon substrate layer being sequentially formed with, from bottom to top, a diffusion layer, an N-type zinc oxide layer, a first passivation layer, and a first antireflection layer; wherein the N-type zinc oxide layer is made of tetrapod-like N-type zinc oxide whisker powder as a raw material; and a back surface of the P-type silicon substrate layer being sequentially formed with, from top to bottom, a second passivation layer and a second antireflection layer; and an electrode, the electrode including a front electrode and a back electrode.