Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.

An active matrix light emitting diodes display module integrated with single-walled carbon nanotubes control circuits includes a light emitting diode pixel having a crystalline semiconductor light emitting diode, single-walled carbon nanotubes switching transistors and a charge storage capacitor.

In some embodiments, an optoelectronic semiconductor light emitting device includes: a substrate; and a plurality of epitaxial semiconductor layers disposed on the substrate. Each of the epitaxial semiconductor layers can comprise an epitaxial oxide. At least one of the epitaxial semiconductor layers can comprise an optically emissive material of direct bandgap type. At least one of the epitaxial semiconductor layers can comprise (Al.sub.x1Ga.sub.1−x1).sub.2O.sub.3 wherein 0≤x1≤1. The plurality of epitaxial semiconductor layers can comprise: first region comprising a first conductivity type; a second region comprising a not-intentionally doped (NID) intrinsic region; and a third region comprising a second conductivity type. The substrate and the plurality of epitaxial semiconductor layers can be a substantially single crystal epitaxially formed device. The optoelectronic semiconductor light emitting device can be configured to emit light having a wavelength in a range from 150 nm to 425 nm.

In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

A nitride semiconductor light emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer disposed between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer and comprising a plurality of stacks, each comprising a well layer and a barrier layer. The well layers include, successively from the n-side nitride semiconductor layer side, a first well layer, a second well layer, and a third well layer that is positioned closest to the p-side nitride semiconductor layer among the well layers. A thickness of the second well layer is greater than a thickness of the first well layer. A thickness of the third well layer is greater than the thickness of the second well layer. Among the barrier layers, the first barrier layer, which is positioned between the third well layer and the p-side nitride semiconductor layer, is doped with a p-type impurity.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

Provided is a light modulator including a first reflective layer, a cavity layer provided on the first reflective layer, and a second reflective layer provided on the cavity layer opposite to the first reflective layer, the second reflective layer including a plurality of lattice structures, wherein each lattice structure of the plurality of lattice structures have a pin diode structure and includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer, and wherein a thickness of the p-type semiconductor layer and a thickness the n-type semiconductor layer are in a range from 8% to 16% of a thickness of the intrinsic semiconductor layer.