A light-emitting thyristor includes a layered structure having a semiconductor DBR layer, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductive type, a third semiconductor layer, and a fourth semiconductor layer of the second conductivity type in this order on a semiconductor substrate, the third semiconductor layer has at least one fifth semiconductor layer of the first conductivity type and a multi-quantum well structure, the fifth semiconductor layer is present between the second semiconductor layer and the multi-quantum well structure, the multi-quantum well structure is formed of barrier layers and quantum well layers, and the number of the quantum well layers is greater than or equal to 10.

The invention provides a silicon pn based device with different dopant and impurity implanted concentrations strategically placed in the device, the pn junction being reverse biased, such that the 650 nm optical emission is stimulated and enhanced. The invention extends to a silicon avalanche light emitting device comprising a first junction and a second junction, said first junction including a reverse biased excitation zone for injecting high energy carriers in a first direction and said second junction being forward biased so as to inject high density low energy carriers opposite to said first direction, wherein an interaction zone is formed between said first junction and said second junction so as to enhance emission of 650 nm photons through interactions between said high energy carriers and said low energy carriers.

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

A stacked superluminescent light-emitting diode having multiple active regions coupled together using and via tunnel junctions. The material compositions of each of the active regions (corresponding quantum wells and/or barriers) differ from one another to provide a controlled different light emission at wavelength (and/or wavelength range) for each junction. In operation of the device, the spectral width of the aggregate light output generated by different junctions is defined by all the junctions, thereby producing a spectrally-broader emission than that of any single, separately taken junction within the device. Thus, the device is configured to operate as a broadband infrared light source.

A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

Disclosed is a quantum-confined Stark effect (QCSE) modulator. In the modulator, a first doped semiconductor region has a first type conductivity, is at the bottom of a trench in a dielectric layer and is immediately adjacent to a semiconductor layer. An MQW region is in the trench on the first doped semiconductor region and at least upper segments of sidewalls of the MQW region are angled away from adjacent sidewalls of the trench such that there are spaces between the MQW region and the dielectric layer. Dielectric spacers fill the spaces. A second doped semiconductor region has a second type conductivity, is on top of the MQW region and optionally extends laterally onto the tops of the dielectric spacers. The spacers prevent shorting of the doped semiconductor regions. Also disclosed are embodiments of a photonics structure including the modulator and of methods for forming the modulator and the photonics structure.

The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.

A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.