Provided is a semiconductor light-emitting device including a plurality of nodes and a plurality of transfer diodes connecting the nodes, and gates of a shift thyristor and a light-emitting thyristor are connected to each of the nodes. Each of the transfer diodes includes a stacked structure including a first semiconductor layer of a first conductivity type provided over a semiconductor substrate, a second semiconductor layer of a second conductivity type, which is different from the first conductivity type, provided over the first semiconductor layer, a third semiconductor layer of the first conductivity type provided over the second semiconductor layer, a fourth semiconductor layer of the second conductivity type provided over the third semiconductor layer, and a fifth semiconductor layer of the first conductivity type provided over the fourth semiconductor layer, and a diode is formed by a p-n junction between the fourth and fifth semiconductor layers.

A light emitting diode having multiple tunnel junctions is provided. This comprises the common contact layer, the first and second tunnel junction layers respectively disposed on the bottom surface and the upper surface of the common contact layer, the first light emitting structure disposed on the bottom surface of the first tunnel junction layer and the second light emitting structure disposed on the upper surface of the second tunnel junction layer. Light emitting structures emitting blue and green light may be disposed above and below the common contact layer. By injecting holes into the first light emitting structure and the second light emitting structure through the common contact layer formed of the n-type semiconductor, current spreading effect is improved, leading to improved light emitting efficiency. Since the n-type semiconductor layer can be disposed on the upper surface exposed to the outside, risk of damage occurring in subsequent fabrication steps can be reduced.

A light-emitting thyristor includes a layered structure having a semiconductor DBR layer, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductive type, a third semiconductor layer, and a fourth semiconductor layer of the second conductivity type in this order on a semiconductor substrate, the third semiconductor layer has at least one fifth semiconductor layer of the first conductivity type and a multi-quantum well structure, the fifth semiconductor layer is present between the second semiconductor layer and the multi-quantum well structure, the multi-quantum well structure is formed of barrier layers and quantum well layers, and the number of the quantum well layers is greater than or equal to 10.

This document describes a device that is monolithic and capable of emitting quantum light without using previous configurations known in the art that require certain elements which yield certain disadvantages, which may be solved by implementing the device of the invention described herein. In this way the use of a transmitter which controls the state of charge or the wavelength of quantum light emitters independently of current in the device is implemented and does function properly when quantum light emitters are embedded in photonic structures, like microcavities or photonic crystals (PC); this is achieved by stacking semiconductor layers with different composition and doping types. A quantum light emitter circuit, which is a quantum optical circuit comprising at least two of said devices, is also an as aspect of the invention disclosed herein.

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.

A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference Eg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.

A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.