A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

A method includes: introducing a gas including gallium, an ammonia gas, and a gas including a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; lowering a temperature of the reactor from the first temperature to a second temperature; introducing an ammonia gas with a first flow rate to the reactor and increasing the temperature of the reactor from the second temperature to a third temperature; and introducing a gas including gallium, an ammonia gas with a second flow rate, and a gas including an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer in a state in which the reactor has been heated to the third temperature.

A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.

A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio F.sub.p/F.sub.III is a p/III ratio and a flow rate ratio F.sub.V/F.sub.III is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

A three-dimensional (3D) structure for optoelectronics including a pyramid made of a first InGaN-based material formed from a substrate, wherein the 3D structure includes a wire made of a second GaN-based material, different from the first material, the wire extending in a longitudinal direction perpendicular to the plane of the substrate between the substrate and a base of the InGaN-based pyramid, so that the 3D structure has the general shape of a pencil. One or more embodiments of the invention also relates to a method for manufacturing such a 3D structure, and an optoelectronic device based on a plurality of these 3D structures.

A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on a first upper surface of the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; an n-side contact electrode that includes a Ti layer in contact with a second upper surface of the n-type semiconductor layer, an Al layer provided on the Ti layer, and a nitride layer that covers the Al layer. The nitride layer includes a first portion made of TiN and a second portion containing TiAlN.

Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.