A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure; and a protective film. In a plan view: the first electrode has a first connecting portion, a first extending portion, and two second extending portions, the second electrode has a second connecting portion, and two third extending portions, the first extending portion extends linearly in a direction from the first connecting portion toward the second connecting portion, the two second extending portions are located on opposite sides of the first extending portion, respectively, with each of the second extending portions having two bent portions and a linear portion extending parallel to the first extending portion and located between the two bent portions, and the two third extending portions are located between the first extending portion and the two second extending portions, respectively.

A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure; and a protective film. In a plan view: the first electrode has a first connecting portion, a first extending portion, and two second extending portions, the second electrode has a second connecting portion, and two third extending portions, the first extending portion extends linearly in a direction from the first connecting portion toward the second connecting portion, the two second extending portions are located on opposite sides of the first extending portion, respectively, with each of the second extending portions having two bent portions and a linear portion extending parallel to the first extending portion and located between the two bent portions, and the two third extending portions are located between the first extending portion and the two second extending portions, respectively.

A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.