In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

A preparation method for a resonant cavity light-emitting diode comprises: forming a first mirror and a first semiconductor layer on a substrate in sequence; forming an active layer on the first semiconductor layer; and forming a second semiconductor layer and a second mirror on the active layer in sequence. The preparation method further comprises: planarizing at least one of a first contact surface between the first semiconductor layer and the first mirror, and a second contact surface between the second semiconductor layer and the second mirror. Since the first contact surface between the first semiconductor layer and the first mirror, and/or the second contact surface between the second semiconductor layer and the second mirror is planarized, the light emission uniformity of the resonant cavity light-emitting diode can be improved.

A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

An optoelectronic component (1) is specified comprising a semiconductor body (2) comprising a first semiconductor layer sequence (3) and a second semiconductor layer sequence (7) which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence (3) has a first active region (4), which generates electromagnetic primary radiation (26) with a first peak wavelength the second semiconductor layer sequence (7) comprises a second active region (9), which has a section configured to partially absorb electromagnetic primary radiation (26) and to re-emit electromagnetic secondary radiation (27) having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

A surface mountable light emitting diode (LED) package with inclined light emitting surface is presented herein. An optoelectronic component comprises the surface mountable package, which comprises a top surface, a cavity, and a mounting surface that is parallel to the top surface to facilitate an attachment, via an automatic surface mount technology pick-and-place equipment, of the mounting surface to a printed circuit board of the optoelectronic component. The cavity comprises a material that facilitates a transmission of electromagnetic radiation comprising visible light and infrared light, optoelectronic device(s) positioned within the cavity that generate and/or receive the electromagnetic radiation, and a light emitting surface that is adjacent to the top surface and that is inclined at an angle relative to a vertical axis of a plane of the top surface to facilitate, via the material, a transmission/reception of the electromagnetic radiation from/by the optoelectronic device(s).

A method for manufacturing an optoelectronic device having a substrate and, on a first face of the substrate, at least one stack, in a longitudinal direction, of at least one injection layer of a first type of carriers and an active layer. The method including formation of a growth mask on the first face of the substrate, the growth mask having an opening in the longitudinal direction through which the first face is exposed, formation, from the exposed zone of the substrate, of the injection layer of the first type of carriers within the opening, formation of the active layer on the injection layer, within the opening, such that the active layer is confined in the opening and does not extend outside of the opening. One or more embodiment also relates to an optoelectronic device having an active layer confined in an opening of a growth mask.

An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.

The light emitting element according to the present disclosure comprises a first active layer that emits light having a first wavelength by injecting current, a second active layer that emits light having a second wavelength different from the first wavelength by absorbing the light having the first wavelength, and a first reflecting mirror in which a reflectance of light having the first wavelength is higher than a reflectance of light having the second wavelength, wherein the first reflecting mirror is disposed at a position closer to an emission end, from which the light emitted by the first active layer or the second active layer exits outside, than the first active layer and the second active layer.