A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in such order from the first surface to the second surface. The active layer includes a quantum well structure having multiple periodic units each of which includes a well layer and a barrier layer disposed sequentially in such order. A bandgap of the barrier layer is greater than that of the well layer, and the bandgaps of the barrier layers gradually increase in a direction from the first surface of the semiconductor epitaxial structure to the second surface of the semiconductor epitaxial structure.

This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.

A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.

A unit pixel of a microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, and red light are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.

A unit pixel of a Red-Green-Cyan-Blue (RGCB) microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, cyan light, and red light, are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.

A semiconductor device is provided, which includes a substrate, a first semiconductor structure, a plurality of first holes, a first dielectric structure and a second semiconductor structure. The first semiconductor structure is located on the substrate. The first holes are periodically arranged in the first semiconductor structure. The first dielectric structure is filled in one or more of the first holes. The second semiconductor structure is located on the first semiconductor structure.

A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 10.sup.17 at/cm.sup.3. The electrically conductive layer may include doped diamond.

An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.

Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.