Provided are an ultraviolet emitting optical device and an operating method thereof. The ultraviolet emitting optical device includes a substrate, a first encapsulation layer, an active layer and a second encapsulation layer sequentially stacked on the substrate, a first electrode layer between the first encapsulation layer and the active layer, a second electrode layer between the active layer and the second encapsulation layer, and color centers provided in the active layer, wherein the active layer includes hexagonal boron nitride (hBN), wherein the color centers are configured to emit light in an ultraviolet wavelength range.

A first electrode upper layer of an electrode upper layer of a display device and a second electrode upper layer are disposed to partially expose a top surface of the first electrode base layer and a top surface of the second electrode base layer, respectively. A first insulating layer of the display device includes contact portions partially exposing a top surface of the first electrode base layer, a top surface of the second electrode base layer, and a top surface of the pad electrode upper layer.

A display device according to an embodiment includes a pixel and a bank. The pixel includes sub-pixels and an emission area including sub-emission areas corresponding to the sub-pixels. The bank surrounds the emission area. The pixel includes electrodes disposed in each of the sub-emission areas, at least one light emitting element disposed in each of the sub-emission areas, and bank patterns disposed under the electrodes, the bank patterns overlapping a portion of the electrodes. The bank patterns include a first bank pattern including a first valley, the first bank pattern being disposed in a first edge area of the emission area in a first direction. The bank patterns include a second bank pattern including a second valley, the second bank pattern being disposed in a second edge area of the emission area in the first direction.

Methods of fabricating single photon emitters (SPEs) including nanoindentation of hexagonal boron nitride (hBN) host materials and annealing thereof, devices formed from such methods, and chips with a single photon emitter. A substrate with a layer of hBN is provided. Nanoindentation is performed on the layer of hBN to produce an array of sub-micron indentations in the layer of hBN. The layer of hBN is annealed to activate SPEs near the indentations. Devices include a substrate with an SPE produced in accordance with the methods. Chips include a substrate, an hBN layer, and an SPE including an indentation on the hBN layer, in which the substrate is not damaged at the indentation.

Systems, apparatus, and methods are described for a disinfection system formed of a plurality of modular units, wherein each modular unit is (1) coupleable to at least one other modular unit from the plurality of modular units and (2) includes an energy source from a plurality of energy sources. The plurality of energy sources can be configured to provide energy having an intensity capable of disinfecting a surface of the object located in a disinfecting area. The disinfection system can be used with object indicator tags and/or include one or more safety features.

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

Each of a plurality of light emitting elements has a hexagonal shape with a center. An interior angle at each of corners is less than 180°. The plurality of light emitting elements include a first light emitting element having a first lateral side surface and a second light emitting element having a second lateral side surface. An orientation of the hexagonal shape of the second light emitting element is rotated by 30 degrees plus 30°+60°×N (N is an integer) with respect to the center of the second light emitting element relative to an orientation of the hexagonal shape of the first light emitting element such that the second lateral side surface is not parallel to the first lateral side surface.

A light emitting apparatus including a substrate, a first and a second light emitter, a first mirror that reflects light from first light emitter, a second mirror that reflects light from second light emitter, and a support member that has a first and second hole and supports the first and second mirror. The first and second light emitter each include a first semiconductor layer, a second semiconductor layer having conductivity type different from the conductivity type of first semiconductor layer, and a light emitting layer provided between the first and second semiconductor layer. The first semiconductor layer forms a plurality of columnar sections. The plurality of columnar sections of the first light emitter and the second light emitter are disposed in the first and second hole respectively. The first mirror and second mirror are provided at the side surface of support member that defines the first and second hole respectively.

A light emitting apparatus including a substrate, a first and a second light emitter, a first mirror that reflects light from first light emitter, a second mirror that reflects light from second light emitter, and a support member that has a first and second hole and supports the first and second mirror. The first and second light emitter each include a first semiconductor layer, a second semiconductor layer having conductivity type different from the conductivity type of first semiconductor layer, and a light emitting layer provided between the first and second semiconductor layer. The first semiconductor layer forms a plurality of columnar sections. The plurality of columnar sections of the first light emitter and the second light emitter are disposed in the first and second hole respectively. The first mirror and second mirror are provided at the side surface of support member that defines the first and second hole respectively.