An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

Disclosed is an organic light emitting display device including a dam structure disposed in a non-display area of a substrate and an alignment mark disposed outside the dam structure. The alignment mark is not covered by, and does not overlap with, the dam structure, because the alignment mark is disposed outside the dame structure. Thus, a scribing process may be performed smoothly.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

A bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer. Any one of the epitaxial layer and the support substrate has a bonding surface with a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center.

A bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer. Any one of the epitaxial layer and the support substrate has a bonding surface with a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center.

Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.

A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer provided on the base surface and having a surface on which protrusions are formed above the apices of the bumps.