An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 μm in a top view.

A method of forming a light emitting structure, the light emitting structure comprising: a light emitting region configured to emit light having a primary peak wavelength; a partially reflective region; a reflective region; and colour conversion region, wherein the light emitting region is positioned at least partially between the partially reflective layer and the reflective layer and the partially reflective region is positioned at least partially between the colour conversion region and the light emitting region, wherein the partially reflective region is configured to reflect light of a predetermined range of wavelengths and allow light outside the predetermined range of wavelengths to pass through the partially reflective region, wherein the primary peak wavelength is outside the predetermined range of wavelengths.

Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.

Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.

An electroluminescent device, wherein the electroluminescent device includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, an active layer, a first electrode, a second electrode, and an optical conversion material. The active layer is disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer and electrically connected with these two. The first-conductivity-type semiconductor layer has a light-emitting surface disposed on a side opposite to the active layer, and includes a plurality of 3D structures arranged regularly, extending from the light-emitting surface towards the active layer to jointly define at least one cavity having a depth greater than 70% a thickness of the first-conductivity-type semiconductor layer. The optical conversion material is filled in the cavity.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.

An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al.sub.(1-x)In.sub.xN, where 0≤x≤1. A maximum value of the x value in the plurality of regions is the same, a minimum value of the x value in the plurality of regions is the same, and an absolute value of a gradient slope of each of the regions is 0.1%/nm to 50%/nm. A thickness of the nucleation layer is less than a thickness of the buffer layer. A roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.

An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al.sub.(1-x)In.sub.xN, where 0≤x≤1. A maximum value of the x value in the plurality of regions is the same, a minimum value of the x value in the plurality of regions is the same, and an absolute value of a gradient slope of each of the regions is 0.1%/nm to 50%/nm. A thickness of the nucleation layer is less than a thickness of the buffer layer. A roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.