A display panel and a display device are provided in the present disclosure. The display panel includes a substrate and an array layer on the substrate, where the array layer includes a plurality of control units, one control unit includes a plurality of thin-film transistors, and the plurality of thin-film transistors in a same control unit is sequentially arranged along a ring-shaped path. The display panel further includes a plurality of light-emitting units on a side of the array layer away from the substrate. The plurality of light-emitting units and the plurality of control units are in a one-to-one correspondence. A light-emitting unit includes a plurality of light-emitting devices each having a first electrode. A plurality of first electrodes in a same light-emitting unit is sequentially arranged along an arrangement direction of the plurality of thin-film transistors in a control unit corresponding to the same light-emitting unit.

A display panel and a display device are provided in the present disclosure. The display panel includes a substrate and an array layer on the substrate, where the array layer includes a plurality of control units, one control unit includes a plurality of thin-film transistors, and the plurality of thin-film transistors in a same control unit is sequentially arranged along a ring-shaped path. The display panel further includes a plurality of light-emitting units on a side of the array layer away from the substrate. The plurality of light-emitting units and the plurality of control units are in a one-to-one correspondence. A light-emitting unit includes a plurality of light-emitting devices each having a first electrode. A plurality of first electrodes in a same light-emitting unit is sequentially arranged along an arrangement direction of the plurality of thin-film transistors in a control unit corresponding to the same light-emitting unit.

An organic light-emitting display panel having a display area and a non-display area surrounding the display area and includes a base substrate, an organic light-emitting layer, a pixel definition layer, and a microlens layer that are located in the display area is disclosed. The organic light-emitting layer is located at a side of the base substrate and includes light-emitting units. The pixel definition layer includes first openings, and each light-emitting unit is located in one of the first openings. The microlens layer is located at a side of the pixel definition layer facing away from the base substrate and includes at least one first microlens. An orthogonal projection of the first microlens on the base substrate is located between orthogonal projections of two adjacent first openings on the base substrate.

An organic light-emitting display panel having a display area and a non-display area surrounding the display area and includes a base substrate, an organic light-emitting layer, a pixel definition layer, and a microlens layer that are located in the display area is disclosed. The organic light-emitting layer is located at a side of the base substrate and includes light-emitting units. The pixel definition layer includes first openings, and each light-emitting unit is located in one of the first openings. The microlens layer is located at a side of the pixel definition layer facing away from the base substrate and includes at least one first microlens. An orthogonal projection of the first microlens on the base substrate is located between orthogonal projections of two adjacent first openings on the base substrate.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

Disclosed is a method for manufacturing a set of light emitters each including a light emitting structure and an electrical contact, the method including the steps of:—providing a wafer carrying a set of light emitting structures, each emitting structure being configured to emit a first radiation when an electric current flows through the emitting structure, and—manufacturing, for each emitting structure, an electric contact, the contact being electrically insulated from each other. The manufacturing includes:—forming a first set of at least two first contacts and at least one conductor, the contact of the first set being electrically connected to each other first contact of the one or the conductor,—injecting, for each contact belonging to the first set, a electric current through the contact and the corresponding emitting structure, and—observing a radiation emitted in response to the injection.

Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.

Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.

A display device includes a substrate including a pixel area, and a pixel disposed in the pixel area and including an emission area and a non-emission area. The pixel includes a first alignment electrode and a second alignment electrode spaced from each other on the substrate, an insulating layer disposed on the first and second alignment electrodes, at least one light emitting element disposed on the insulating layer between the first alignment electrode and the second alignment electrode in the emission area, a pattern disposed between the at least one light emitting element and the insulating layer and including a hydrophilic group, and a bank disposed on the insulating layer in the non-emission area and including a first opening corresponding to the emission area and a second opening spaced from the first opening of the bank.