A display device may include pixels disposed on a substrate, each of the pixels including a via layer disposed on the substrate and formed of an organic layer; first and second alignment electrodes disposed on the via layer; a first insulating layer disposed on the first and second alignment electrodes; a first bank pattern disposed on the first insulating layer on the first alignment electrode, and a second bank pattern disposed on the first insulating layer on the second alignment electrode; a second insulating layer disposed on the first and second bank patterns and the first insulating layer; at least one light emitting element disposed on the second insulating layer; a first electrode electrically connected to the light emitting element and the first alignment electrode; and a second electrode electrically connected to the light emitting element and the second alignment electrode. The first insulating layer may include an organic layer.

Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.

Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.

A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

An ultraviolet light-emitting diode chip, including: a n-type semiconductor layer; an intermediate layer disposed on the n-type semiconductor layer, the intermediate layer including a plurality of first tapered pits; an active layer disposed on the intermediate layer; a p-type semiconductor layer disposed on the active layer; a n-type electrode disposed on the n-type semiconductor layer; a p-type electrode disposed on the p-type semiconductor layer; a reflecting layer; a bonding layer; and a substrate. The reflecting layer and the bonding layer are disposed between the p-type electrode and the substrate. The active layer includes a plurality of second tapered pits each in a shape of hexagonal pyramid and a plurality of first flat regions connecting every two adjacent second tapered pits. The projected area of the plurality of first flat regions is less than 30% of the projected area of the active layer.

An ultraviolet light-emitting diode chip, including: a n-type semiconductor layer; an intermediate layer disposed on the n-type semiconductor layer, the intermediate layer including a plurality of first tapered pits; an active layer disposed on the intermediate layer; a p-type semiconductor layer disposed on the active layer; a n-type electrode disposed on the n-type semiconductor layer; a p-type electrode disposed on the p-type semiconductor layer; a reflecting layer; a bonding layer; and a substrate. The reflecting layer and the bonding layer are disposed between the p-type electrode and the substrate. The active layer includes a plurality of second tapered pits each in a shape of hexagonal pyramid and a plurality of first flat regions connecting every two adjacent second tapered pits. The projected area of the plurality of first flat regions is less than 30% of the projected area of the active layer.

A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.

Provided herein may be a display device. The display device may include: a first connection electrode extending in a first direction, and electrically connected to a first power line to which a first power supply is applied; a second connection electrode spaced apart from the first connection electrode, and electrically connected to a second power line to which a second power supply is applied; a first electrode extending from the first connection electrode; a second electrode extending from the second connection electrode, and disposed in parallel to the first electrode with a predetermined distance therebetween; and a plurality of light emitting elements each including a first end electrically connected to the first electrode, and a second end electrically connected to the second electrode. Each of the first electrode and the second electrode may include a bent portion.

Provided herein may be a display device. The display device may include: a first connection electrode extending in a first direction, and electrically connected to a first power line to which a first power supply is applied; a second connection electrode spaced apart from the first connection electrode, and electrically connected to a second power line to which a second power supply is applied; a first electrode extending from the first connection electrode; a second electrode extending from the second connection electrode, and disposed in parallel to the first electrode with a predetermined distance therebetween; and a plurality of light emitting elements each including a first end electrically connected to the first electrode, and a second end electrically connected to the second electrode. Each of the first electrode and the second electrode may include a bent portion.