A display device includes a pixel in a display area. The pixel includes: spaced apart first and second electrodes; a first insulating layer on the first electrode and the second electrode and between the first electrode and the second electrode and having a first etch selectivity; a first insulating pattern on the first insulating layer between the first electrode and the second electrode, and having a second etch selectivity; a light emitting element on the first insulating pattern; a second insulating pattern having the second etch selectivity and being on one area of the light emitting element such that a first end and the second end of the light emitting element are exposed; and third and fourth electrodes configured to electrically connect the first end and the second end of the light emitting element to the first and second electrodes, respectively.

A display device includes a pixel in a display area. The pixel includes: spaced apart first and second electrodes; a first insulating layer on the first electrode and the second electrode and between the first electrode and the second electrode and having a first etch selectivity; a first insulating pattern on the first insulating layer between the first electrode and the second electrode, and having a second etch selectivity; a light emitting element on the first insulating pattern; a second insulating pattern having the second etch selectivity and being on one area of the light emitting element such that a first end and the second end of the light emitting element are exposed; and third and fourth electrodes configured to electrically connect the first end and the second end of the light emitting element to the first and second electrodes, respectively.

A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.

A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

A display panel and a pixel structure are provided. The pixel structure includes a substrate, a micro light emitting diode (micro LED or μLED), a sidewall structure, a filling layer, and a reflective layer. The substrate has a bearing surface, and the micro LED is disposed on the bearing surface directly or indirectly. The sidewall structure is disposed on the bearing surface and defines at least one accommodation cavity to accommodate the micro LED. The filling layer is filled in the accommodation cavity and surrounds the micro LED. The reflective layer covers a top surface of the filling layer and has a plurality of light-transmissible windows. The micro LED forms, in a vertical projection direction, a vertical projection region in an overlapping region on the reflective layer. Among the light-transmissible windows, those having longer distances to the vertical projection region have larger areas.

A display panel and a pixel structure are provided. The pixel structure includes a substrate, a micro light emitting diode (micro LED or μLED), a sidewall structure, a filling layer, and a reflective layer. The substrate has a bearing surface, and the micro LED is disposed on the bearing surface directly or indirectly. The sidewall structure is disposed on the bearing surface and defines at least one accommodation cavity to accommodate the micro LED. The filling layer is filled in the accommodation cavity and surrounds the micro LED. The reflective layer covers a top surface of the filling layer and has a plurality of light-transmissible windows. The micro LED forms, in a vertical projection direction, a vertical projection region in an overlapping region on the reflective layer. Among the light-transmissible windows, those having longer distances to the vertical projection region have larger areas.

A structure for a photonic integrated circuit, comprising: a substrate; a first portion of n-type semiconductor material on a first surface area of the substrate, a second portion of n-type semiconductor material on a second surface area of the substrate; a waveguide; and an element between the first portion and the second portion. The waveguide is on and in contact with the element. The element is configured to reduce electric current flow from the first portion to the second portion during propagation of light via the waveguide.