Patent classifications
H01L33/24
Micro light-emitting diode display
A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.
Micro light-emitting diode display
A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.
DISPLAY DEVICE
A display device comprises sub-pixels, a bank disposed on a substrate and disposed at a boundary between the sub-pixels, a wavelength control layer including wavelength conversion layers disposed in a region surrounded by the bank and a light transmitting layer disposed in the sub-pixels, a color filter layer disposed on the wavelength control layer, and light emitting element layers disposed between the substrate and the wavelength control layer, the light emitting layers including a light emitting element disposed in one of the sub-pixels, and connection electrodes connected to ends of the light emitting element. Each of the wavelength conversion layers contacts at least one of the connection electrodes
DISPLAY DEVICE
A display device comprises sub-pixels, a bank disposed on a substrate and disposed at a boundary between the sub-pixels, a wavelength control layer including wavelength conversion layers disposed in a region surrounded by the bank and a light transmitting layer disposed in the sub-pixels, a color filter layer disposed on the wavelength control layer, and light emitting element layers disposed between the substrate and the wavelength control layer, the light emitting layers including a light emitting element disposed in one of the sub-pixels, and connection electrodes connected to ends of the light emitting element. Each of the wavelength conversion layers contacts at least one of the connection electrodes
DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME
A display device includes a pixel disposed in a display area; a first line electrically connected to the pixel; and a first control line disposed around the first line. The pixel includes a first electrode and a second electrode spaced apart from each other; at least one intermediate electrode including a first intermediate electrode disposed between the first electrode and the second electrode; light emitting elements electrically connected between a pair of adjacent electrodes among the first electrode, the second electrode, and the at least one intermediate electrode; and a first switching element electrically connected between the first intermediate electrode and the first line, the first switching element being controlled by a signal applied to the first control line.
DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME
A display device includes a pixel disposed in a display area; a first line electrically connected to the pixel; and a first control line disposed around the first line. The pixel includes a first electrode and a second electrode spaced apart from each other; at least one intermediate electrode including a first intermediate electrode disposed between the first electrode and the second electrode; light emitting elements electrically connected between a pair of adjacent electrodes among the first electrode, the second electrode, and the at least one intermediate electrode; and a first switching element electrically connected between the first intermediate electrode and the first line, the first switching element being controlled by a signal applied to the first control line.
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
A display device includes a light-emitting diode including a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor; a first voltage line to which a first voltage is applied; a second voltage line to which a second voltage is applied; a first transistor including a source electrode electrically connected to the first voltage line and a drain electrode electrically connected to a first electrode of the light-emitting diode and to the first conductivity-type semiconductor; a second transistor including a drain electrode electrically connected to a gate electrode of the first transistor and a source electrode electrically connected to a data line to apply a data signal; a capacitor electrically connected to the gate electrode of the first transistor and the first electrode; and a third transistor including a source electrode electrically connected to the second voltage line and a drain electrode electrically connected to the first electrode.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
A display device comprises a display area, a non-display area surrounding the display area, pixels disposed in the display area of the substrate, each of the pixels including a first electrode, a second electrode, and light-emitting elements electrically connected to the first electrode and the second electrode, and a first voltage wiring disposed in the display area and the non-display area, the first voltage wiring electrically connected to at least some of the pixels. The first voltage wiring includes a first separation wiring disposed in the non-display area, and a second separation wiring disposed in the non-display area and spaced apart from the first separation wiring.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
A display device comprises a display area, a non-display area surrounding the display area, pixels disposed in the display area of the substrate, each of the pixels including a first electrode, a second electrode, and light-emitting elements electrically connected to the first electrode and the second electrode, and a first voltage wiring disposed in the display area and the non-display area, the first voltage wiring electrically connected to at least some of the pixels. The first voltage wiring includes a first separation wiring disposed in the non-display area, and a second separation wiring disposed in the non-display area and spaced apart from the first separation wiring.
LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE HAVING THE SAME
A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.