An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of first grooves and a plurality of second grooves, the first grooves and the second grooves have different sizes, at least one first electronic component of the plurality of first electronic components is disposed in one of the plurality of first grooves, at least one second electronic component of the plurality of second electronic components is disposed in one of the plurality of second grooves, a maximum length passing through a center of a bottom surface of the at least one first electronic component is defined as L1, a bottom length of one side of at least one second groove among the second grooves is defined as L2, and the at least one first electronic component and the at least one second groove satisfy the condition of L1>L2.

Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

A method of forming a monolithic LED precursor is provided. The method comprises: providing a substrate having a top surface; forming a first semiconductor layer comprising a Group III-nitride on the top surface of the substrate; selectively masking the first semiconductor layer with a LED mask layer, the LED mask layer comprising an aperture defining a LED well through a thickness of the LED mask layer to an unmasked portion of the first semiconductor layer, the LED well comprising LED well sidewalls extending from a top surface of the first semiconductor layer to a top surface of the LED mask layer; and selectively forming a monolithic LED stack within the LED well on the unmasked portion of the first semiconductor layer. The monolithic LED stack comprises a n-type semiconductor layer comprising a Group III-nitride formed on the first semiconductor layer, an active layer formed on the first semiconductor layer comprising one or more quantum well sub-layers, the active layer comprising a Group III-nitride, and a p-type semiconductor layer comprising a Group III-nitride formed on the second semiconductor layer. The LED stack sidewalls of the monolithic LED stack extend from the top surface of the first semiconductor layer conform to the LED well sidewalls of the LED mask layer.

A method of forming a monolithic LED precursor is provided. The method comprises: providing a substrate having a top surface; forming a first semiconductor layer comprising a Group III-nitride on the top surface of the substrate; selectively masking the first semiconductor layer with a LED mask layer, the LED mask layer comprising an aperture defining a LED well through a thickness of the LED mask layer to an unmasked portion of the first semiconductor layer, the LED well comprising LED well sidewalls extending from a top surface of the first semiconductor layer to a top surface of the LED mask layer; and selectively forming a monolithic LED stack within the LED well on the unmasked portion of the first semiconductor layer. The monolithic LED stack comprises a n-type semiconductor layer comprising a Group III-nitride formed on the first semiconductor layer, an active layer formed on the first semiconductor layer comprising one or more quantum well sub-layers, the active layer comprising a Group III-nitride, and a p-type semiconductor layer comprising a Group III-nitride formed on the second semiconductor layer. The LED stack sidewalls of the monolithic LED stack extend from the top surface of the first semiconductor layer conform to the LED well sidewalls of the LED mask layer.

A method of forming a Light Emitting Diode (LED) precursor is provided. The method comprises forming a LED stack comprising a plurality of Group III-nitride layers on a substrate, the LED stack comprising a LED stack surface formed on an opposite side of the LED stack to the substrate, and masking a first portion of the LED stack surface, leaving a second portion of the LED stack surface exposed. The second portion of the LED stack surface is subjected to a resistivity changing process such that a second region of the LED stack below the second portion of the LED stack surface comprising at least one of the Group III-nitride layers of the LED stack has a relatively higher resistivity than a resistivity of the respective Group-III nitride layer in a first region of the LED stack below the first portion of the LED stack surface.

A method of forming a Light Emitting Diode (LED) precursor is provided. The method comprises forming a LED stack comprising a plurality of Group III-nitride layers on a substrate, the LED stack comprising a LED stack surface formed on an opposite side of the LED stack to the substrate, and masking a first portion of the LED stack surface, leaving a second portion of the LED stack surface exposed. The second portion of the LED stack surface is subjected to a resistivity changing process such that a second region of the LED stack below the second portion of the LED stack surface comprising at least one of the Group III-nitride layers of the LED stack has a relatively higher resistivity than a resistivity of the respective Group-III nitride layer in a first region of the LED stack below the first portion of the LED stack surface.

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the fourth semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the fourth semiconductor layer has sloped sides parallel to the sloped sides of the third semiconductor layer, (iv) a primary electrical contact on the fourth semiconductor layer, wherein the contact is only on the upper surface portion of the fourth semiconductor layer which is parallel to the plane of the LED array precursor, (v) electrically insulating, optically transparent spacers on the sloped sides of the fourth semiconductor layer, the spacers having an internal surface facing the sloped sides of the fourth semiconductor layer and an opposing external surface and (vi) a reflecting layer, electrically conducting extending over the external surface of the spacers, wherein the third semiconductor layer comprises a plurality of quantum well sub-layers, the quantum well sub-layers having a greater thickness on a portion parallel to the plane of the LED array precursor and a reduced thickness on a portion which is not parallel to the plane of the LED array precursor.

A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.