A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and the second electrode. The emission layer includes a quantum well that includes a first layer and a second layer, each having a different band gap. The first layer includes magnesium, and the second layer includes zinc. The first layer and the second layer are amorphous.

An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

A printing ink formulation includes a functional material and a solvent being evaporable from the printing ink formulation to form a functional material thin film. The solvent is formed by mixing at least two organic solvents including a first solvent and a second solvent. The solvent system containing at least two solvents can effectively dissolve the functional material without the need of adding an additive, and can also effectively prevent the occurrence of a “coffee-ring effect”, and accordingly, the thin film containing a uniform thickness and a strong electron transmission capability can be obtained.

A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.

A full-color display module with an ultra-wide color gamut (UWCG) is based on a specific type of pixel applicable for display. The full-color display module is based on a red-green-cyan-blue-pixel (RGCB-pixel) and thus, includes at least one red-light source, at least one green-light source, at least one cyan-light source, and at least one blue-light source. The full-color display module comprises a substrate that establishes an electrical base for the at least one red-light source, at least one green-light source, at least one cyan-light source, and at least one blue-light source. The full-color display module can display all colors in the color gamut of UWCG, has excellent luminous efficiency and durability, and is advantageous in realizing high resolution by improving the degree of integration of the light source array itself.

A full-color display module with an ultra-wide color gamut (UWCG) is based on a specific type of pixel applicable for display. The full-color display module is based on a red-green-cyan-blue-pixel (RGCB-pixel) and thus, includes at least one red-light source, at least one green-light source, at least one cyan-light source, and at least one blue-light source. The full-color display module comprises a substrate that establishes an electrical base for the at least one red-light source, at least one green-light source, at least one cyan-light source, and at least one blue-light source. The full-color display module can display all colors in the color gamut of UWCG, has excellent luminous efficiency and durability, and is advantageous in realizing high resolution by improving the degree of integration of the light source array itself.