A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.

A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eox.sub.D, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eox.sub.D, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant production of heat, are provided. The methods and apparatuses employ radiant energy to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals to produce nanoparticle catalysts supported on graphene. Methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with visible, infrared and/or ultraviolet radiation, e.g. using sunlight, lasers, etc. are also provided.

A graphene display device includes a graphene display unit and a display control unit electrically connected with the graphene display unit. The graphene display unit includes a plurality of graphene light emitting structures constituting dynamic sub-pixels of the graphene display unit. The graphene display unit is configured for dividing pixel gamut of multiple base colors of pixels of the graphene display unit. A relationship between the pixel gamut and a pixel gamut coordinate is configured, and the graphene display unit controls the dynamic sub-pixel to display corresponding light in accordance with the pixel gamut coordinate of the inputted pixel. In addition, a display driving method of graphene display devices is disclosed. The graphene display device may accomplish multiple base colors display with fewer pixels such that wider color gamut coverage may be provided, and the aperture rate of the display device is enhanced and the power consumption is reduced.

An embodiment optical test circuit includes a first optical circuit and a second optical circuit formed on a substrate, an input optical waveguide optically connected to the first optical circuit and the second optical circuit, and an output optical waveguide optically connected to the first optical circuit and the second optical circuit. The optical test circuit also includes a light emitting diode optically connected to the input optical waveguide, and a photodiode optically connected to the output optical waveguide.

An embodiment optical test circuit includes a first optical circuit and a second optical circuit formed on a substrate, an input optical waveguide optically connected to the first optical circuit and the second optical circuit, and an output optical waveguide optically connected to the first optical circuit and the second optical circuit. The optical test circuit also includes a light emitting diode optically connected to the input optical waveguide, and a photodiode optically connected to the output optical waveguide.

An airport runway light for use as a runway approach light for a runway lighting system, the runway light having a light body with a base configured to support the runway light in a light socket of a runway lighting system, the base having an electrical connection to electrically connect the runway light to the runway lighting system, the light further including one or more output windows wherein the runway light has a high-efficiency infrared source and one or more infrared reflectors to direct the infrared source outwardly through the one or more output windows, the infrared source including a silicon nitride element wherein the infrared source produces virtually no detectable visible light and with much less power consumption.