A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

An airport runway light for use as a runway approach light for a runway lighting system, the runway light having a light body with a base configured to support the runway light in a light socket of a runway lighting system, the base having an electrical connection to electrically connect the runway light to the runway lighting system, the light further including one or more output windows wherein the runway light has a high-efficiency infrared source and one or more infrared reflectors to direct the infrared source outwardly through the one or more output windows, the infrared source including a silicon nitride element wherein the infrared source produces virtually no detectable visible light and with much less power consumption.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for emitting light.

The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for absorbing light.

An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm.sup.2 or less.

An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm.sup.2 or less.

A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.

A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.

A method of fabricating a micro hit emitting diode (micro LED) array substrate having a plurality of micro LEDs. The method includes forming a plurality of signal lines on a base substrate; depositing a semiconductor material on the base substrate to form a semiconductor material layer; and patterning the semiconductor material layer to form a semiconductor layer of the plurality of micro LEDs. face of the plurality of signal lines away from the base substrate is uncovered during de sit the semiconductor material. The plurality of signal lines form a grid for facilitating epitaxial growth of the semiconductor material.

A method of fabricating a micro hit emitting diode (micro LED) array substrate having a plurality of micro LEDs. The method includes forming a plurality of signal lines on a base substrate; depositing a semiconductor material on the base substrate to form a semiconductor material layer; and patterning the semiconductor material layer to form a semiconductor layer of the plurality of micro LEDs. face of the plurality of signal lines away from the base substrate is uncovered during de sit the semiconductor material. The plurality of signal lines form a grid for facilitating epitaxial growth of the semiconductor material.