A display device includes a display area including light emitting elements in a first pixel row, pixel circuits in a first circuit row and electrically connected to the first pixel row, light emitting elements in a second pixel row between the first pixel row and the first circuit row, pixel circuits in a second circuit row and electrically connected to the second pixel row, and a gate driver including a first stage disposed between the pixel circuits of the first circuit row and a second stage disposed between the pixel circuits of the second circuit row. A distance between adjacent pixel circuits with the first stage between the adjacent pixel circuits in the first circuit row is greater than a distance between other pixel circuits of the first circuit row.

A display device includes: a substrate; a transistor layer on a first surface of the substrate; a pad portion; a first via layer on the transistor layer, and spaced from the pad portion; a second via layer on the first via layer, and exposing an upper surface of the first via layer; a third via layer on the second via layer, and exposing an upper surface of the second via layer; a display element layer on the third via layer; a lead line on a second surface of the substrate; a side surface connection line on the first surface, the second surface, and a side surface between the first surface and the second surface, the side surface connection line electrically connecting the pad portion to the lead line; and an over-coating layer covering the side surface connection line, and overlapping with the exposed upper surface of the first via layer.

A light emitting diode (LED) module includes a substrate layer including an active area and a non-active area excluding the active area, at least one wiring layer provided on the substrate layer, and a test pad connected to the at least one wiring layer and provided in the non-active area.

A display device includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first LED chip including a first anode and a first cathode, a second LED chip including a second anode and a second cathode, and a first transistor. One of source and drain electrodes of the first transistor is electrically connected to a first power supply voltage line. The other of the source and drain electrodes is electrically connected to the first anode and the second cathode. The first cathode and the second anode are electrically connected to a second power supply voltage line. A first potential of the first power supply voltage line is different to a second potential of the second power supply voltage line.

An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.

A display includes a first sub-pixel that emits a first color light and a second sub-pixel that emits a second color light. The first sub-pixel includes a first anode pad electrode, a second anode pad electrode, a first cathode pad electrode, and a first light emitting element including a first sub-light emitting element disposed on the first anode pad electrode and the first cathode pad electrode, and a second sub-light emitting element disposed on the second anode pad electrode and the first cathode pad electrode. An area of the first cathode pad electrode is larger than an area of the first anode pad electrode or an area of the second anode pad electrode. The first sub-light emitting element and the second sub-light emitting element emit the first color light during different periods, and the first sub-light emitting element and the second sub-light emitting element emit a same color light.

A light-emitting element includes a first semiconductor layer doped to have a first polarity; a second semiconductor layer doped to have a second polarity that is different from the first polarity; an active layer placed between the first semiconductor layer and the second semiconductor layer; and an insulating layer surrounding at least the outer surface of the active material. The insulating layer includes an insulating film surrounding the active layer, and an element dispersion agent including a magnetic metal and bonded to an outer surface of the insulating film.

The invention relates to a component (100) having an electrically insulating and radiation-transparent substrate (9) and at least one semiconductor chip (10) arranged on the substrate (9). The semiconductor chip (10) is designed to generate electromagnetic radiation and has a front side (11) and a rear side (12) facing away from the front side (11), wherein the front side (11) of the semiconductor chip (10) faces the substrate (9) and is designed as a radiation exit face of the semiconductor chip (10), and wherein the rear side (12) of the semiconductor chip (10) faces away from the substrate (9), wherein the semiconductor chip (10) can be electrically contacted externally via the rear side (12). The invention further relates to a method for producing such a component.

A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.