A display device may include including a first insulating reflective layer including a distributed Bragg reflector above a substrate, a first electrode and a second electrode above the first insulating reflective layer, a second insulating reflective layer including a distributed Bragg reflector above the first electrode and the second electrode, and a light emitting element above the second insulating reflective layer.

A display device includes a first electrode and a second electrode that are disposed on a substrate to be spaced apart from each other, a first insulating layer disposed on the first electrode and the second electrode, a light emitting element disposed on the first insulating layer, a first connection electrode in electrical contact with a first end of the light emitting element on the first insulating layer, and an organic layer disposed on the first connection electrode and surrounding the light emitting element.

A display device includes a first semiconductor layer on a substrate, and including a first portion in a first pixel area, a second portion in a second pixel area, and a first connection portion connecting the first portion and the second portion, a second semiconductor layer on the first semiconductor layer, and including a first portion in the first pixel area, a second portion in the second pixel area, and a connection portion connecting the first portion and the second portion, a bias voltage line on the second semiconductor layer, electrically connected to the first connection portion of the first semiconductor layer, and extending in a second direction intersecting a first direction, and a reference voltage line on the second semiconductor layer, electrically connected to the connection portion of the second semiconductor layer, and extending in the second direction.

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. Multiple devices can be arranged as a light-emitting array.

Discussed is a display device including a base portion; a first electrode formed on the base portion; a barrier rib portion stacked on the first electrode while forming a plurality of cells; a second electrode formed on the barrier rib portion; and semiconductor light emitting diodes seated in the plurality of cells, wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween.

Discussed is a display device and a method for manufacturing the display device, where the display device includes a substrate, a wiring electrode disposed on the substrate, semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and includes conductive particles and an insulating material, and a light-transmitting layer formed between the semiconductor light emitting devices, where the semiconductor light emitting devices includes first semiconductor light emitting devices emitting a first color and second semiconductor light emitting devices emitting a second color different from the first color, and where the first and second semiconductor light emitting devices are alternately disposed with each other.

A display device includes a first substrate having a first surface and a second surface opposite to the first surface, a first light-emitting layer including a first polymer and an ionic liquid on the second surface, a first electrode provided on a first side surface of the first light-emitting layer, a second electrode provided on a second side surface of the first light-emitting layer opposite to the first side surface of the first light-emitting layer, and a second substrate in contact with the first light-emitting layer opposite to the first substrate.

A flip-chip semiconductor light-emitting element and a semiconductor light-emitting device are provided. The element includes a substrate and a light-emitting epitaxial layer disposed on the substrate. When electrode structures are formed overlying the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer is omitted, thus a surface of the light-emitting epitaxial layer has a higher flatness. When an insulating reflective layer and an insulating protective layer are subsequently formed, flatness of the insulating reflective layer and the insulating protective layer can be ensured. An overall thickness of the insulating reflective layer and the insulating protective layer is no greater than 3 μm, no abnormal protrusions occur when electrode through holes are formed in the insulating reflective layer and the insulating protective layer, the electrode pads do not have cracks, fractures, and other defects, thus stability and reliability of the device can be enhanced.

A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.