A light-emitting element includes a semiconductor structure including a first semiconductor layer, an active layer, and a second semiconductor layer, an insulating film, a first electrode, a second electrode, a plurality of first conductive members, and a plurality of second conductive members. A plurality of first regions at an upper surface of the first semiconductor layer are aligned in a first direction. A first electrode region of the first electrode includes a plurality of first portions covering the plurality of first regions and a second portion positioned between the first portions adjacent to each other. The first portion includes a plurality of first extending portions extending in a direction toward the second electrode with respect to the second portion. The second electrode includes a plurality of first recessed portions corresponding to the plurality of the first extending portions, respectively.

Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.

A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ≥15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

The present invention relates to a light emitting device. The light emitting device according to an embodiment of the present invention comprises: a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a channel layer arranged around the lower portion of the light emitting structure; a first electrode arranged on the channel layer; a second electrode arranged under the light emitting structure; and a connection wiring for electrically connecting the first electrode and the first conductive semiconductor layer.

A light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and the second light-emitting structure unit includes a second sidewall; an isolation layer formed on the first sidewall and the second sidewall, including a first edge on the first light-emitting structure unit and wherein the first edge has an acute angle in a cross-sectional view; and an electrical connection formed on the isolation layer, the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall and the second sidewall are inclined; and wherein the electrical connection includes a first part on the first light-emitting structure unit, and the first part does not overlap the first edge of the isolation layer.

A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. Each stress control layer includes stress control regions separated from adjacent stress control regions by a predetermined spacing. The stress control layer induces one of a tensile stress and a compressive stress in an adjacent semiconductor layer.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

A method includes obtaining a first wafer including a first substrate and epitaxial layers that include a first semiconductor layer, a light-emitting region, and a second semiconductor layer; bonding a second substrate to the second semiconductor layer on the first wafer; removing the first substrate from the first wafer to expose the first semiconductor layer; depositing a reflector layer on the first semiconductor layer; forming a first metal bonding layer on the reflector layer; bonding a second metal bonding layer on a backplane wafer to the first metal bonding layer; removing the second substrate to expose the second semiconductor layer; and etching through the second semiconductor layer, the light-emitting region, the first semiconductor layer, the reflector layer, the first metal bonding layer, and the second metal bonding layer to form an array of mesa structures for an array of micro-light emitting diodes.

A light-emitting array includes a semiconductor LED structure, multiple transparent dielectric bodies, a set of multiple, independent first electrical contacts, and a set of second electrical contacts. The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each dielectric body protrudes away from the first semiconductor layer and has on its surface an electrically conductive layer in electrical contact with the first semiconductor layer, forming a portion of a corresponding one of the first electrical contacts. Each dielectric body and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others. Some light emitted in the pixel region propagates into the dielectric body, undergoes internal reflection(s) within the dielectric body, and propagates out of the array through the dielectric body and diode structure.