A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; and a p-side current diffusion layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a TiN layer, a Ti layer, a Rh layer, and a TiN layer stacked successively. A film density of the Rh layer included in the p-side contact electrode is larger than a film density of the Rh layer included in the p-side current diffusion layer.

A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; a p-side electrode covering layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a Ti layer, a Rh layer, and a TiN layer stacked successively; a dielectric covering layer that has a connection opening provided on the p-side electrode covering layer and covers the p-side electrode covering layer in a portion different from the connection opening; and a p-side current diffusion layer that connects to the p-side electrode covering layer in the connection opening.

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Provided is a semiconductor light emitting element including a semiconductor stacked structure having a projecting portion from which light is emitted, an insulating layer provided on a side face of the projecting portion and a bottom face on a periphery of the projecting portion, a transparent electrode provided on a top face of the projecting portion and on at least part of a front surface of the insulating layer, and an electrode covering the bottom face on the periphery of the projecting portion and covering at least part of the transparent electrode provided on the front surface of the insulating layer.

A manufacturing apparatus of a display device, includes: a first unit to transfer a plurality of light emitting elements on a growth substrate to a first film; a second unit to expand the first film; a third unit to retransfer the plurality of light emitting elements to a second film; a fourth unit to determine positions of the plurality of light emitting elements on the second film; a fifth unit to bin the light emitting elements on the second film, and determine an effective light source from among the light emitting elements; a sixth unit to form a plurality of pixels on a substrate, each pixel including a first bonding electrode; a seventh unit to remove the second film after transferring one light emitting element to the first bonding electrode of one pixel; and an eighth unit to form a second electrode on the one light emitting element.

A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

A light emitting diode (LED) pixel for a display including a first LED stack, a second LED stack disposed on a partial region of the first LED stack, a third LED stack disposed on a partial region of the second LED stack, a first ohmic electrode disposed on the first LED stack and forming ohmic contact with the first LED stack, a second transparent electrode disposed between the second LED stack and the third LED stack and in ohmic contact with an upper surface of the second LED stack, and a third transparent electrode in ohmic contact with an upper surface of the third LED stack, in which the first ohmic electrode is laterally spaced apart from the second LED stack.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

A display device includes: a first light emitting element located between the first and second patterns; a first alignment electrode located on the first pattern, the first alignment electrode having a first inclined surface opposing the first light emitting element; a first connection electrode at a same layer as the first alignment electrode; and first and second electrodes electrically connected to respective end portions of the first light emitting element. Each of the first alignment electrode and the first connection electrode includes first and second electrode layers that are sequentially stacked. A contact hole exposing the first electrode layer of the first connection electrode is formed in the second electrode layer of the first connection electrode. The first electrode is in contact with the first electrode layer of the first connection electrode and a side surface of the second electrode layer of the first connection electrode through the contact hole.

A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.