A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.

A light emitting device of an embodiment of the present disclosure includes: a substrate having a first surface and a second surface opposed to each other; semiconductor stacks provided on the first surface of the substrate and each including a first conductivity type layer, an active layer, and a second conductivity type layer that are stacked in order from a side of the first surface, the semiconductor stacks including multiple light emitting regions configured to emit light; and a separation section provided between the multiple light emitting regions and having a top surface at a position higher than the active layer in a direction of a normal to the first surface of the substrate.

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h.sub.1s between emitting dipoles μ.sub.1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles μ.sub.1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

A light emitting device includes a semiconductor structure and an insulating layer. The semiconductor structure has a mesa recess extending from a top surface of a second semiconductor layer to a top surface of a first semiconductor layer. The insulating layer covers the semiconductor structure and has an electrode passage hole on the top surface of the first semiconductor at the bottom of the mesa recess. The second semiconductor layer has a top boundary edge intersecting the boundary wall of the mesa recess above the electrode passage hole. A minimum distance from the electrode passage hole to the top boundary edge of the second semiconductor layer is no less than 1 μm.

A radiation emitting semiconductor chip may be configured to emit electromagnetic radiation from a radiation exit surface during operation. The chip may include a carrier on which a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type are arranged, a first current spreading layer arranged between the first semiconductor layer sequence and the carrier, a second current spreading layer arranged between the first current spreading layer and the carrier, a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer, a reflective layer arranged between the second current spreading layer and the carrier, and an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer.

A light-emitting device includes a substrate, a light-emitting element provided on the substrate, the light-emitting element being configured to emit a first light, a wavelength conversion layer provided on the light-emitting element and containing a plurality of wavelength conversion particles configured to convert a wavelength of a part of the first light and to emit a second light, a light-transmissive plate provided above the wavelength conversion layer, and a wall including a light-reflective material, the wall surrounding the wavelength conversion layer and the light-transmissive plate and being in contact with a lateral surface of the light-transmissive plate at an inner surface of the wall. An upper portion of the wavelength conversion layer includes protrusions and recesses defined by the plurality of wavelength conversion particles. The wavelength conversion layer and the light-transmissive plate define an air layer therebetween.

A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a planarization layer disposed between the first and second LED sub-units and being light transmissive, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

A method of forming an optical device, the method comprising the steps of forming a mesa, the mesa comprising an active layer configured to emit light from a first light emitting surface of the mesa when subjected to an electrical current, the mesa further comprising a second surface opposite the light emitting surface and substantially vertical sidewalls, forming spacers on the mesa sidewalls, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face facing the mesa sidewalls, and an opposing external face, depositing a first layer of transparent conducting oxide on the light emitting surface of the mesa, the transparent conducting oxide having an internal face facing the second surface of the mesa, and an opposing external face, and depositing a layer of reflective, electrically conducting material over the transparent conducting oxide and external faces of the spacers.

A flip light emitting diode chip and a manufacturing method therefor. Said chip comprises a substrate (10), an N-type semiconductor layer (21), an active layer (22), a P-type semiconductor layer (23), a transparent conductive layer (31), a transparent insulating layer (32), a reflective electrode (41), a connection electrode (42) and DBR layer (51); the N-type semiconductor layer (21), the active layer (22) and the P-type semiconductor layer (23) are sequentially stacked on the substrate (10), and a groove (100) and an isolating groove (200) are provided on the P-type semiconductor layer (23); the transparent conductive layer (31) and the transparent insulating layer (32) are sequentially stacked on the P-type semiconductor layer (23), and a plurality of through holes (300) are provided in the transparent insulating layer (32); the reflective electrode (41) is provided in the plurality of through holes (300) and in contact with the transparent conductive layer (31), and is laid on the transparent insulating layer (32); the connection electrode (42) is provided on the N-type semiconductor layer (21); the DBR layer (51) is laid on surfaces of the groove (100) and the isolating groove (200); the plurality of through holes (300) comprise a plurality of rows of first through holes (310), and the first through holes (310) in the same row have the same distance (d) to the groove (100); and in a direction away from the groove (100), the sum of the cross-sectional areas of the first through holes (310) in each row gradually increases and the light emitting brightness is improved.

A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.