A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, such that each of the light emitting diodes includes a stack of a first doped semiconductor layer, a second doped semiconductor layer and an active region located between the first and the second doped semiconductor layers, and a conductive encapsulation layer in contact with sidewalls of the first doped semiconductor layers of the array of light emitting diodes.

Discussed is a semiconductor light emitting device for a display panel, a substrate structure for a display panel, and a display device including the substrate structure. A display device including a semiconductor light emitting device can include a first electrode and a second electrode spaced apart from each other on a predetermined substrate, an insulating layer disposed on the first and second electrodes, a first barrier wall disposed on the insulating layer and including a first assembling hole and a semiconductor light emitting device disposed in the first assembling hole of the first barrier wall. Also, the semiconductor light emitting device can include a light emitting structure, a passivation layer on the light emitting structure, and a first reflective alignment structure disposed in the light emitting structure.

An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

Disclosed are a display panel and a display device. The display panel includes a display region, multiple pixels and a substrate. The display region includes an optical component region and a first display region. The multiple pixels include a first pixel and a second pixel, the first pixel includes a first light-emitting element located in the optical component region, and the second pixel includes a second light-emitting element located in the first display region. The optical component region includes an anode connecting line segment, the first light-emitting element includes a first anode, and the anode connecting line segment is electrically connected to the first anode; and in a direction perpendicular to a plane where the substrate is located, an area of the first anode is S1 and an electrical connection area of the first anode and the anode connecting line segment is S2, where 5%<S2/S1≤100%.

Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

A semiconductor light-emitting element includes: an n-side contact electrode in contact with an n-type semiconductor layer; a p-side contact electrode in contact with a p-type semiconductor layer; an n-side first electrode in contact with the n-side contact electrode; a p-side first electrode in contact with the p-side contact electrode; a first insulating layer covering the n-side and p-side first electrodes; an n-side second electrode on the first insulating layer and in contact with the n-side first electrode; a p-side second electrode on the first insulating layer and in contact with the p-side first electrode; a second insulating layer covering the n-side and p-side second electrodes; an n-side pad electrode on the second insulating layer and in contact with the n-side second electrode; and a p-side pad electrode on the second insulating layer and in contact with the p-side second electrode.

A light emitting device includes a substrate, a first semiconductor layer provided to the substrate, a laminated structure disposed at an opposite side to the substrate of the first semiconductor layer, and including a plurality of columnar parts, a first electrically-conductive layer as a surface layer at laminated structure side in the first semiconductor layer, and a second electrically-conductive layer opposed to the first electrically-conductive layer via the laminated structure, wherein the columnar part includes a light emitting layer configured to emit light, a second semiconductor layer which is disposed between the light emitting layer and the first electrically-conductive layer, and a third semiconductor layer disposed between the light emitting layer and the second electrically-conductive layer, concavo-convex shapes are formed on a surface of the first electrically-conductive layer, an insulating layer is disposed on the first electrically-conductive layer, and electrode layers are disposed so as to cover an area where the insulating layer is disposed, and some of the concavo-convex shapes.

A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO.sub.2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al.sub.2O.sub.3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.

A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.

The present disclosure provides a semiconductor structure and a manufacturing method therefor. In the method, for the substrate, the first conductive type semiconductor layer, the light emitting layer and the second conductive type semiconductor layer distributed sequentially from bottom to top, the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in first predetermined regions are removed to form grooves. The second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in second predetermined regions and third predetermined regions are retained. Layers retained in second predetermined regions form light emitting units arranged in an array. Various layers retained in third predetermined regions form connection posts, each of which connects adjacent light emitting units. Widths of the third predetermined region are smaller than widths of the second predetermined region in the lateral and longitudinal direction of the array.