This disclosure is related to post processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structure such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. In another example, dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with the transferred micro devices. In another example, color conversion layers are integrated into the system substrate to create different output from the micro devices.

A light-emitting element includes a semiconductor structure including a first semiconductor layer, an active layer, and a second semiconductor layer, an insulating film, a first electrode, a second electrode, a plurality of first conductive members, and a plurality of second conductive members. A plurality of first regions at an upper surface of the first semiconductor layer are aligned in a first direction. A first electrode region of the first electrode includes a plurality of first portions covering the plurality of first regions and a second portion positioned between the first portions adjacent to each other. The first portion includes a plurality of first extending portions extending in a direction toward the second electrode with respect to the second portion. The second electrode includes a plurality of first recessed portions corresponding to the plurality of the first extending portions, respectively.

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.

A light emitting device includes a resin package including: a first lead and a second lead, each including a top surface and a bottom surface, and a first resin portion located between the first lead and the second lead and extending in a first direction; a first light emitting element and a second light emitting element arrayed on the top surface of the first lead in the first direction, the first light emitting element and the second light emitting element each including at least a first side surface; and an encapsulant located on the top surface of the first lead and covering the first light emitting element and the second light emitting element. The first side surface of the first light emitting element and the first side surface of the second light emitting element partially face each other.

A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

A light-emitting device includes a semiconductor light emitting stack; an electrode on the semiconductor light emitting stack, the electrode including a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer; and a plurality of pits between the bonding layer and the semiconductor light emitting stack, wherein one of the plurality of pits is not filled up by the adhesion layer.

Embodiments provide a light emitting diode and a method of fabricating the same. The light emitting diode includes a base, a light emitting structure disposed on the base, at least one first electrode disposed on the light emitting structure; and a second electrode disposed under the light emitting structure, wherein at least a portion of the second electrode is covered by the base and the base includes a supporting insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting structure, and a surface of the at least one bulk electrode is exposed through the supporting insulator. The light emitting diode has excellent reliability and efficiency.