A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

In some embodiments, a semiconductor structure comprises a semiconductor layer, a metal layer, and a contact layer adjacent to the metal layer, and between the semiconductor layer and the metal layer. The contact layer can comprise one or more piezoelectric materials comprising spontaneous piezoelectric polarization that depends on material composition and/or strain, and a region comprising a gradient in materials composition and/or strain adjacent to the metal layer. In some embodiments, a light emitting diode (LED) device comprises an n-doped short period superlattice (SPSL) layer, an intrinsically doped AlN/GaN SPSL layer adjacent to the n-doped SPSL layer, a metal layer, and an ohmic-chirp layer between the metal layer and the intrinsically doped AlN/GaN SPSL layer.

According to one embodiment, a display device includes an organic insulating layer, a light reflecting layer, a light emitting element, a sealing layer having an inclined surface having a lower end and an upper end, and a coating layer. An interface between the inclined surface and the coating layer is configured to reflect light traveling through the sealing layer toward the light reflecting layer. The lower end is located below a middle of the light emitting element in a height direction of the light emitting element. The upper end is located above the middle of the light emitting element in the height direction of the light emitting element.

A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective layer in the first opening is in contact with the first semiconductor layer, and located between the first semiconductor layer and the stress adjustment layer. The first metal reflective layer and the stress adjustment layer contain a same metal element, and a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer.

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.