Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

A micro light-emitting film structure includes a first conductivity type semiconductor film, a light-emitting film, a second conductivity type semiconductor film, a first contact electrode, and a second contact electrode. The first conductivity type semiconductor film has first and second surfaces opposite to each other. The second surface includes an asperity. A height difference of relief of the asperity is less than or equal to 1 μm. The light-emitting film is disposed on the first surface. The second conductivity type semiconductor film is connected to the light-emitting film sandwiched between the second conductivity type semiconductor film and the first conductivity type semiconductor film. The first contact electrode is connected to the first conductivity type semiconductor film. The second contact electrode is connected to the second conductivity type semiconductor film. A thickness of the micro light-emitting film structure is equal to or smaller than 10 μm.

An optoelectronic arrangement is specified, comprising a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.

A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

An ultraviolet light-emitting diode chip, including: a n-type semiconductor layer; an intermediate layer disposed on the n-type semiconductor layer, the intermediate layer including a plurality of first tapered pits; an active layer disposed on the intermediate layer; a p-type semiconductor layer disposed on the active layer; a n-type electrode disposed on the n-type semiconductor layer; a p-type electrode disposed on the p-type semiconductor layer; a reflecting layer; a bonding layer; and a substrate. The reflecting layer and the bonding layer are disposed between the p-type electrode and the substrate. The active layer includes a plurality of second tapered pits each in a shape of hexagonal pyramid and a plurality of first flat regions connecting every two adjacent second tapered pits. The projected area of the plurality of first flat regions is less than 30% of the projected area of the active layer.

The present disclosure provides a light-emitting diode chip, which includes a substrate, an epitaxial structure, an electrode metal layer, and a eutectic metal layer. The eutectic metal layer has an elongation greater than that of the electrode metal layer, and a hardness less than that of the electrode metal layer.

A display device comprises a first and a second electrode disposed on a base substrate and spaced apart from each other, the second electrode facing the first electrode, a light emitting elements disposed between the first electrode and the second electrode, and a light structure disposed on the light emitting elements. The light structure includes a light transmitting portion disposed on the light emitting element, and a light shielding portion including at least one opening pattern. The light shielding portion is disposed on the light transmitting portion.

A flip light emitting chip and a manufacturing method thereof are provided. The flip light emitting chip includes a substrate and an extended stacking layer formed on the substrate. The extended stacking layer includes a first semiconductor layer formed on the substrate, an active region formed on the first semiconductor layer, and a second semiconductor layer formed on the active region. The flip light emitting chip further includes a reflective layer formed on the second semiconductor layer, a barrier layer formed on the second semiconductor layer and covering the reflective layer, a bonding layer formed on the barrier layer and an insulating layer formed on the bonding layer such that the bonding layer is retained between the barrier layer and the insulating layer for enhancing a binding force between the barrier layer and the insulating layer.

A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.