Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A micro light emitting diode (micro LED) apparatus. The micro LED apparatus includes a thin film transistor array substrate including a plurality of thin film transistors; an array of a plurality of micro LEDs on the thin film transistor array substrate, a respective one of the plurality of micro LEDs being connected to a respective one of the plurality of thin film transistors; and a plurality of microcavities respectively on a side of the plurality of micro LEDs away from the thin film transistor array substrate. The plurality of microcavities include a first microcavity having a first optical path length and a second microcavity having a second optical path length different from the first optical path length. The first microcavity is configured to allow a light of a first color to transmit there-through. The second microcavity is configured to allow a light of a second color to transmit there-through.

A lighting device is provided comprising at least one light-emitting element comprising a light-emitting surface configured to emit light; and a light-guiding sheet at least partially covering the light-emitting surface and comprising at least one cavity forming a passage for light emitted from the light-emitting surface. Thereby, at least one lateral surface limiting the at least one cavity is configured to reflect light emitted from the light-emitting surface. Further, a size of an opening of the at least one cavity facing the light-emitting surface is smaller than an area of the light-emitting surface.

Embodiments of the present disclosure provide an optical resonant cavity and a display panel. The optical resonant cavity includes a light conversion layer, the optical resonant cavity is configured to emit light with a specific wavelength range, and the light conversion layer is arranged at at least one wave node of a center wavelength of the light with the specific wavelength range in the optical resonant cavity.

A top-emitting light-emitting diode includes a glass substrate, a polysilicon layer, a white light emitting layer and a transparent conductive layer. The polysilicon layer is formed on a first surface of the glass substrate. Moreover, plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals. The white light emitting layer is formed over the polysilicon layer and the plural sub-wavelength structures. The transparent conductive layer is formed over the white light emitting layer.

In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

Various embodiments may relate to an optical device. The optical device may include a radiation collimator configured to generate a directed light beam based on omni-directional light emission. The optical device may also include one or more optical elements configured to change a parameter of the directed light beam. The radiation collimator comprises a first reflector, a second reflector and a spacer between the first reflector and the second reflector. The first reflector, the second reflector and the spacer form a resonant cavity.

A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.