In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

The present disclosure relates to the technical field of light-emitting diodes, in particular to an LED display convenient to be repaired and a repair method thereof. The LED display comprises: a planarization layer and a circuit layer, the planarization layer being provided with first and second previously prepared electrodes for being connected to a standby LED chip; the first and second previously prepared electrodes are respectively in communication with a thin-film transistor and a power line ground terminal which are in the circuit layer; a groove is provided in the planarization layer, the first and second previously prepared electrodes respectively extend along a sidewall of the groove, and are respectively connected to first and second contact electrodes at the bottom of the groove, an LED COB is accommodated in the groove, and two electrodes in the LED COB are respectively connected to the first and second contact electrodes; and the top of the LED COB does not exceed the opening of the groove.

A semiconductor light emitting device includes a package body including a concave portion surrounded by sidewalls, a light emitting diode (LED) chip on a mounting surface of the concave portion, a lead frame in the package body and electrically connected to the LED chip, a wavelength conversion layer in the concave portion and surrounding the LED chip, the wavelength conversion layer being surrounded by the sidewalls of the package body and including a wavelength conversion material, and a transparent resin layer on the wavelength conversion layer, the transparent resin layer having first opposite side surfaces exposed through sides of the package body and spaced apart from each other along a first direction parallel to the mounting surface, and second opposite side surfaces contacting an inner surface of the package body and spaced apart from each other in a second direction parallel to the mounting surface.

A method of manufacturing a light emitting device, the method includes: preparing an intermediate structure including a supporter, a plurality of light emitting elements arranged on the supporter, a covering layer arranged on the supporter and surrounding the light emitting elements, and wiring electrodes each arranged on and straddling the covering layer and a corresponding one of the light emitting elements: preparing a board including light-reflective resin arranged on a surface of the board; pressing the intermediate structure against the light-reflective resin arranged on the board, with the wiring electrodes facing the light-reflective resin; curing the light-reflective resin to form a light-reflective resin layer; and removing the supporter.

A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.

Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 10.sup.8/cm.sup.2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.

An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.

A display panel including an array substrate, a first sub-pixel, a second sub-pixel, and a first light-emitting diode is provided. The array substrate includes a first connection pad and a second connection pad. The first sub-pixel includes a first driving unit electrically connected to the first connection pad. The second sub-pixel includes a second driving unit electrically connected to the second connection pad. The first light-emitting diode completely overlaps and is physically isolated from the second connection pad. The first light-emitting diode is not completely overlapped and is electrically connected to the first connection pad. A manufacturing method of a display panel is also provided.