A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

The present invention relates to a method of manufacturing a quantum-dot film having encapsulated quantum dots dispersed therein, in which quantum dots are uniformly dispersed in a matrix resin to thus increase quantum yield and in which deterioration of the quantum dots can be prevented through encapsulation, a quantum-dot film manufactured thereby, and a wavelength conversion sheet and a display including the same.

A wavelength converter includes: a substrate portion; and an optical conversion layer including optical conversion inorganic particles and a binder portion that mutually holds the optical conversion inorganic particles, and being formed on the substrate portion, wherein the substrate portion and the binder portion bond to each other, and wherein the binder portion includes, as a main component, an inorganic polycrystalline substance composed in such a manner that inorganic material particles having an average particle size of 1 μm or less are bound to one another, and has thermal conductivity of 2 w/mK or more.

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder filling the porous glass or silicon support structure.

A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

A display device includes a circuit substrate, multiple light-emitting elements, a color conversion layer, and a bank. The light-emitting elements are disposed on and electrically connected to the circuit substrate, respectively. The color conversion layer is disposed on a first light-emitting element of the light-emitting elements. The bank is disposed between the light-emitting elements. There is a gap between the bank and the color conversion layer. A manufacturing method of a display device is also provided.

The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Provided is a luminescent material having excellent durability. The luminescent material contains second semiconductor nanoparticles that contain first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light; and a metal compound in which the second semiconductor nanoparticles are embedded. The first semiconductor nanoparticles contain M.sup.1, M.sup.2, and Z. M.sup.1 is at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and contains at least Ag. M.sup.2 is at least one selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga. Z contains at least one selected from the group consisting of S, Se, and Te. The deposit is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se, and Te. The metal compound contains at least one of Zn and Ga, and at least one of S and O.

A wavelength conversion element converts excitation light to light with a different wavelength. The wavelength conversion element includes a substrate including an upper surface, and a wavelength converter on the upper surface of the substrate. The wavelength converter includes a phosphor including a plurality of phosphor particles, molten glass in contact with the plurality of phosphor particles and binding the plurality of phosphor particles to one another, and voids at least between the plurality of phosphor particles, in the molten glass, or between the plurality of phosphor particles and the molten glass. A maximum area of areas of the voids is less than a maximum area of areas of the plurality of phosphor particles in a cross-sectional view of the wavelength converter.

A structure, an optoelectronic device and a method for producing a structure are disclosed. In an embodiment, a structure comprises a first nanoparticle comprising at least one semiconductor material. The first nanoparticle is chromophoric in a first wavelength range and emissive in a second wavelength range. The structure further comprises a plurality of second nanoparticles. The second nanoparticles are non-chromophoric in the first wavelength range and in the second wavelength range.