Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

A display device is provided. The display device includes a substrate, a driving circuit disposed on the substrate, and a light-emitting unit disposed on the driving circuit and electrically connected to the driving circuit. The light-emitting unit includes a first semiconductor layer, a quantum well layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the quantum well layer. The second semiconductor layer includes a first top surface. The display device also includes a first protective layer disposed on the driving circuit and adjacent to the light-emitting unit. The first protective layer includes a second top surface and a plurality of conductive elements formed therein. The elevation of the first top surface is higher than the elevation of the second top surface.

A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

The display device includes sub-pixels disposed in a display area, dummy pixels disposed in a non-display area, a first bank disposed at a boundary between the sub-pixels and including an opening, a second bank disposed at a boundary between the dummy pixels and including an opening, a color conversion layer disposed in the opening of the first bank, and an organic layer disposed in the opening of the second bank.

A light emitting module includes a light emitting diode chip mounted on a first surface of a support substrate, a wavelength conversion member formed on a light emitting surface of the light emitting diode chip, and a reflection member formed to surround a side surface of the wavelength conversion member, an electrode pad formed on a second surface of the support substrate to be electrically connected with the light emitting diode chip, a circuit board formed with a circuit pattern which is electrically connected with the electrode pad, and a conductive bonding material formed between the electrode pad and the circuit pattern to electrically connect the electrode pad and the circuit pattern. Coefficients of thermal expansion of the support substrate, the electrode pad and the conductive bonding material are different, and a coefficient of thermal expansion gradually increases from the support substrate to the circuit board.

A display device includes: a substrate; a plurality of pixel columns on the substrate, each of the plurality of pixel columns including a plurality of pixel groups each including a first pixel and a second pixel arranged along a first direction; and a bank enclosing a perimeter of each of the plurality of pixel groups, the bank including a first opening corresponding to each of the plurality of pixel groups, and a second opening located between two pixel groups adjacent to each other in the first direction among the plurality of pixel groups.

A display device includes pixels, each of the pixels including light emitting elements disposed in pixels, a color conversion layer disposed on the light emitting elements of the pixels, an optical layer disposed on the color conversion layer, and an organic layer disposed on the optical layer. At least one of the optical layer and the organic layer includes recess patterns disposed between the pixels.

An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

A light-emitting device includes: a substrate; a plurality of light-emitting elements mounted to the substrate; and a phosphor layer provided on the plurality of light-emitting elements, the phosphor layer including: a plurality of phosphor particles, and a glass layer covering surfaces of the phosphor particles, wherein the phosphor particles are bonded to each other by the glass layer, and an air layer is formed between the phosphor particles.

A method of manufacturing a light emitting module is provided. A plurality of light-emitting diodes are aligned on an elongated base board. By a dispenser, an uncured paste of sealing material is continuously applied on a plurality of light-emitting diodes aligned on the elongated base board. The applied paste of sealing material is cured.