An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

An optoelectronic component and a method for manufacturing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a diffractive optical element comprising at least one conversion material and a light source configured to emit primary radiation, wherein the conversion material is encapsulated in the diffractive optical element, and wherein the conversion material is arranged in a beam path of the primary radiation and is configured to convert the primary radiation at least partially into secondary radiation.

A light-emitting device includes: a light-emitting element provided separately for each of pixels; a pixel electrode provided on a side of a first surface of the light-emitting element, the pixel electrode being provided for each of the pixels; a common electrode provided on a side of a second surface of the light-emitting element, the second surface being opposite to the first surface, the common electrode being provided separately for each of the pixels that are adjacent to each other; and an electrode coupler that electrically couples a plurality of the common electrodes provided for the respective pixels to each other in a plane region that is different from a plane region in which the light-emitting element is provided.

An example display apparatus includes a liquid crystal panel; a light source plate including a printed circuit board disposed behind the liquid crystal panel, and a light source module mounted on the printed circuit board to supply light to the liquid crystal panel. The light source module includes a light emitting diode (LED) chip; a light guide provided to guide the light emitted from the LED chip; a light converter provided to convert a wavelength of light guided through the light guide, and disposed on a first surface of the light guide and attached to the printed circuit board; and a distributed Bragg reflector (DBR) layer disposed on a second surface of the light guide body and provided to improve a light conversion efficiency of the light conversion member.

A display device according to an embodiment of the present disclosure includes a substrate on which a plurality of sub-pixels are defined, a plurality of LEDs disposed in each of the plurality of sub-pixels, and a plurality of color conversion layers covering the plurality of LEDs. The plurality of color conversion layers each include a plurality of color conversion material layers that are stacked to be spaced apart from each other. Accordingly, according to the present disclosure, it is possible to minimize or reduce light lost inside the color conversion layer by separating the plurality of color conversion material layers from each other, and improve color conversion efficiency and luminance.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

A back-light unit including light-emitting chips and a display apparatus are disclosed. The back-light unit includes a driving voltage line on a substrate, and a ground voltage line spaced apart from the driving voltage line. The light-emitting chips are on a lower insulating layer covering the driving voltage line and the ground voltage line. A driving chip electrically connected to the ground voltage line may be on the substrate. Each of the light-emitting chips may be electrically connected between the driving voltage line and the driving chip by emission connecting lines. A driving dummy pattern and/or a ground dummy pattern is between the light-emitting chips and the emission connecting lines. The driving dummy pattern is electrically connected to the driving voltage line, and the ground dummy pattern is electrically connected to the ground voltage line. Thus, a luminance difference of the light-emitting chips may be prevented or at least reduced.

A display device may include: a substrate including a plurality of pixel areas each including an emission area and a non-emission area; and a pixel located in each of the pixel areas. The pixel may include: a light emitting element including a first end and a second end that face each other; a first electrode located on the first end of the light emitting element and electrically connected to the first end; and a second electrode located on the second end of the light emitting element and electrically connected to the second end. The first electrode and the second electrode may include different conductive materials, and have different thicknesses.

The present disclosure relates to a display device, including at least one or more light sources disposed for each pixel and a light conversion layer disposed on the light source to convert a wavelength of light generated from the light source, wherein the light conversion layer includes a perovskite matrix and quantum dots.