A wavelength conversion member, comprises: a substrate; a first wavelength conversion layer on the substrate, the first wavelength conversion layer containing a first phosphor and a first matrix; and a second wavelength conversion layer containing a second phosphor, first inorganic particles, and a second matrix. The first phosphor and the second phosphor convert at least part of the excitation light incident on the second main surface into first light having longer wavelengths than the excitation light. The first light is emitted from the second main surface of the second wavelength conversion layer. A volume Vp1 of the first phosphor, a volume Vw1 of the first wavelength conversion layer, a volume Vp2 of the second phosphor, and a volume Vw2 of the second wavelength conversion layer satisfy Vp1/Vw1>Vp2/Vw2.

A semiconductor light emitting device may include a semiconductor light emitting diode (LED) chip, a light-transmitting film on the LED chip, and a light-transmitting bonding layer between the light-transmitting film and the semiconductor LED chip. At least one of the light-transmitting film and the light-transmitting bonding layer may include a wavelength conversion material configured to convert light emitted by the semiconductor LED chip into light having a wavelength different from a wavelength of the emitted light. The light-transmitting bonding layer may have a lateral inclined region extending to the lateral surface to form an inclined surface. The semiconductor light emitting device may further include a reflective packaging portion surrounding the light-transmitting bonding layer, covering the first surface such that an electrode of the LED chip is at least partially exposed. The reflective packaging portion may include a reflective material.

In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Provided is a wavelength converting member which can reduce change in the light emission intensity over time as compared with conventional members and a method of producing the wavelength converting member. A wavelength converting member (1) includes a quantum dot layer (2) having quantum dots, barrier layers (3, 4) formed on at least both sides of the quantum dot layer (2). The moisture vapor transmission rate of the barrier layer is lower than 9 g/(m.sup.2.Math.d). Thus, change in the light emission intensity over time can be effectively inhibited.

A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 μm and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

An organic light-emitting display device includes first through third pixels, wherein each of the first through third pixels comprises a first electrode, a second electrode which faces the first electrode, an organic light-emitting layer which is disposed between the first electrode and the second electrode. The first pixel includes a first color filter material, the second pixel includes a second color filter material, and the third pixel includes a third color filter material. The third pixel comprises a first transmitting region in which the third color filter material is not disposed and which is configured to allow a substantial amount of light emitted from the organic light-emitting layer of the third pixel to transmit therethrough.

An LED light-emission device includes a substrate, an LED chip, a phosphor-containing resin containing a phosphor and covering the LED chip, and a diffusing agent-containing resin containing a diffusing agent that diffuses light emitted from the phosphor-containing resin and sealing the phosphor-containing resin. The LED chip, the phosphor-containing resin, and the diffusing agent-containing resin are placed on a same flat face of the substrate.

A chip-scale LED package structure includes a white light emitting unit for emitting a white light, a red flip-chip LED for emitting a red light, a green flip-chip LED for emitting a green light, a blue flip-chip LED for emitting a blue light, and an encapsulation layer. The encapsulation includes an encapsulation resin and a plurality of refractive particles distributed in the encapsulation resin. The encapsulation layer encapsulates the white light emitting unit, the red flip-chip LED, the green flip-chip LED, and the blue flip-chip LED. Moreover, electrodes of the white light emitting unit, electrodes of the red flip-chip LED, electrodes of the green flip-chip LED, and electrodes of the blue flip-chip LED are exposed from the encapsulation layer.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.