The present disclosure provides an electronic device including a driving circuit substrate, a plurality of chips, and a passivation layer. The driving circuit substrate includes a plurality of active elements. The chips are disposed on the driving circuit substrate and electrically connected to the driving circuit substrate. The passivation layer covers the plurality of chips and the driving circuit substrate. The passivation layer has a first part on one of the plurality of chips and a second part on a part of the driving circuit substrate, the second part is not overlapped with the plurality of chips, and a first thickness of the first part is less than a second thickness of the second part. The first space between adjacent two of the plurality of chips is different from a second space between another adjacent two of the plurality of chips.

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

A method for manufacturing a light-emitting device includes providing a transparent member having a protrusion formed at an upper surface of the transparent member. A first resin portion is placed on the protrusion in which the first resin portion has a solid form and is made from a first resin material of which the viscosity decreases when heated. A light-emitting element is placed on the first resin portion, the light-emitting element is caused to be self-aligned with respect to the protrusion by reducing a viscosity of the first resin portion by heating to a first temperature. The first resin portion is solidified by cooling.

A method for manufacturing a light-emitting device includes providing a transparent member having a protrusion formed at an upper surface of the transparent member. A first resin portion is placed on the protrusion in which the first resin portion has a solid form and is made from a first resin material of which the viscosity decreases when heated. A light-emitting element is placed on the first resin portion, the light-emitting element is caused to be self-aligned with respect to the protrusion by reducing a viscosity of the first resin portion by heating to a first temperature. The first resin portion is solidified by cooling.

A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

A semiconductor light emitting device package includes a circuit board with an upper pad, a light emitting diode chip on the circuit board and having a first surface facing the circuit board and a second surface opposing the first surface, and the light emitting diode chip including a substrate, a semiconductor stack structure on the substrate that emits ultraviolet light, and electrodes connected to the semiconductor stack structure, connection bumps between the circuit board and the light emitting diode chip, the connection bumps connecting the upper pad and the electrodes, an underfill resin on the upper pad of the circuit board and covering at least a portion of a side surface of the light emitting diode chip, and a passivation layer on the light emitting diode chip and the underfill resin, the passivation layer covering the underfill resin and being spaced apart from the semiconductor stack structure.

A semiconductor light emitting device package includes a circuit board with an upper pad, a light emitting diode chip on the circuit board and having a first surface facing the circuit board and a second surface opposing the first surface, and the light emitting diode chip including a substrate, a semiconductor stack structure on the substrate that emits ultraviolet light, and electrodes connected to the semiconductor stack structure, connection bumps between the circuit board and the light emitting diode chip, the connection bumps connecting the upper pad and the electrodes, an underfill resin on the upper pad of the circuit board and covering at least a portion of a side surface of the light emitting diode chip, and a passivation layer on the light emitting diode chip and the underfill resin, the passivation layer covering the underfill resin and being spaced apart from the semiconductor stack structure.

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder laminated onto the porous glass or silicon support structure.