A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region, the first semiconductor layered body comprising a first light emitting layer and including: a first lateral surface, and a second lateral surface opposite to the first lateral surface; and a second semiconductor layered body on the second region, the second semiconductor layered body comprising a second light emitting layer and including: a first lateral surface facing the second lateral surface and located on a first semiconductor layered body side of the second semiconductor layered body, and a second lateral surface opposite to the first lateral surface and located on a side opposite the first semiconductor layered body side of the second semiconductor layered body.

A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region, the first semiconductor layered body comprising a first light emitting layer and including: a first lateral surface, and a second lateral surface opposite to the first lateral surface; and a second semiconductor layered body on the second region, the second semiconductor layered body comprising a second light emitting layer and including: a first lateral surface facing the second lateral surface and located on a first semiconductor layered body side of the second semiconductor layered body, and a second lateral surface opposite to the first lateral surface and located on a side opposite the first semiconductor layered body side of the second semiconductor layered body.

A light emitting device includes a light emitting element, a light guide member, a reflecting member, a wavelength conversion member. The light emitting element has a light emitting surface and lateral surfaces. The light guiding member is provided on at least a portion of the lateral surfaces of the light emitting element. The reflecting member is provided on the lateral surface of the light emitting element with the light guiding member interposed therebetween. The wavelength conversion member is provided on the light emitting surface of the light emitting element, the light guiding member and the reflecting member. The wavelength conversion member is provided with a recess between an outer lateral surface of the wavelength conversion member and the light guiding member. The reflecting member is provided in the recess.

A light emitting device includes a light emitting element, a light guide member, a reflecting member, a wavelength conversion member. The light emitting element has a light emitting surface and lateral surfaces. The light guiding member is provided on at least a portion of the lateral surfaces of the light emitting element. The reflecting member is provided on the lateral surface of the light emitting element with the light guiding member interposed therebetween. The wavelength conversion member is provided on the light emitting surface of the light emitting element, the light guiding member and the reflecting member. The wavelength conversion member is provided with a recess between an outer lateral surface of the wavelength conversion member and the light guiding member. The reflecting member is provided in the recess.

The invention relates to a component (100) having an electrically insulating and radiation-transparent substrate (9) and at least one semiconductor chip (10) arranged on the substrate (9). The semiconductor chip (10) is designed to generate electromagnetic radiation and has a front side (11) and a rear side (12) facing away from the front side (11), wherein the front side (11) of the semiconductor chip (10) faces the substrate (9) and is designed as a radiation exit face of the semiconductor chip (10), and wherein the rear side (12) of the semiconductor chip (10) faces away from the substrate (9), wherein the semiconductor chip (10) can be electrically contacted externally via the rear side (12). The invention further relates to a method for producing such a component.

The invention relates to a component (100) having an electrically insulating and radiation-transparent substrate (9) and at least one semiconductor chip (10) arranged on the substrate (9). The semiconductor chip (10) is designed to generate electromagnetic radiation and has a front side (11) and a rear side (12) facing away from the front side (11), wherein the front side (11) of the semiconductor chip (10) faces the substrate (9) and is designed as a radiation exit face of the semiconductor chip (10), and wherein the rear side (12) of the semiconductor chip (10) faces away from the substrate (9), wherein the semiconductor chip (10) can be electrically contacted externally via the rear side (12). The invention further relates to a method for producing such a component.

A display device includes a first electrode and a second electrode disposed on a substrate; a first bank disposed on the substrate, the first bank protruding in a thickness direction of the substrate; a light emitting element disposed on the first electrode and the second electrode; a reflective electrode disposed on the first bank; a second bank disposed on the first bank; and a color conversion layer disposed in an area surrounded by the second bank.

A display device includes a first electrode and a second electrode disposed on a substrate; a first bank disposed on the substrate, the first bank protruding in a thickness direction of the substrate; a light emitting element disposed on the first electrode and the second electrode; a reflective electrode disposed on the first bank; a second bank disposed on the first bank; and a color conversion layer disposed in an area surrounded by the second bank.

According to one embodiment, a display device includes an organic insulating layer, a light reflecting layer, a light emitting element, a sealing layer having an inclined surface having a lower end and an upper end, and a coating layer. An interface between the inclined surface and the coating layer is configured to reflect light traveling through the sealing layer toward the light reflecting layer. The lower end is located below a middle of the light emitting element in a height direction of the light emitting element. The upper end is located above the middle of the light emitting element in the height direction of the light emitting element.

A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective layer in the first opening is in contact with the first semiconductor layer, and located between the first semiconductor layer and the stress adjustment layer. The first metal reflective layer and the stress adjustment layer contain a same metal element, and a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer.