Patent classifications
H01L33/60
LIGHT EMITTING DEVICE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME
A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.
DISPLAY DEVICE
A display device including a substrate and a light source array disposed on the substrate is provide. The light source array includes a plurality of light-emitting units disposed on the substrate, and each light-emitting unit has a light source and an optical component. Each light source is disposed on the substrate and has a light emitting surface. Each optical component has a light receiving surface and a light exit surface, and each optical component is disposed on the light source with the light receiving surface connected to the light emitting surface. The optical component also has a side surface connecting the light receiving surface and the light exit surface. The side surface and the light receiving surface have an included angle between 100 and 130 degrees within the optical component.
DISPLAY DEVICE
A display device including a substrate and a light source array disposed on the substrate is provide. The light source array includes a plurality of light-emitting units disposed on the substrate, and each light-emitting unit has a light source and an optical component. Each light source is disposed on the substrate and has a light emitting surface. Each optical component has a light receiving surface and a light exit surface, and each optical component is disposed on the light source with the light receiving surface connected to the light emitting surface. The optical component also has a side surface connecting the light receiving surface and the light exit surface. The side surface and the light receiving surface have an included angle between 100 and 130 degrees within the optical component.
SEMICONDUCTOR ULTRAVIOLET LIGHT EMITTING DEVICE PACKAGE
A semiconductor ultraviolet light emitting device package is provided. The semiconductor ultraviolet light emitting device package includes: a semiconductor ultraviolet light emitting device mounted on the first surface of the package substrate and configured to emit deep ultraviolet light including a wavelength in a range of 250 nm to 285 nm; a reflector disposed on the first surface of the package substrate to surround the semiconductor ultraviolet light emitting device, and including an inclined sidewall that defines an opening of the reflector, the semiconductor ultraviolet light emitting device disposed within the opening; and a light transmitting cover including a lower surface covering the opening and an upper surface opposite to the lower surface, wherein an antireflective layer is disposed on at least one from among the lower surface and the upper surface.
SEMICONDUCTOR ULTRAVIOLET LIGHT EMITTING DEVICE PACKAGE
A semiconductor ultraviolet light emitting device package is provided. The semiconductor ultraviolet light emitting device package includes: a semiconductor ultraviolet light emitting device mounted on the first surface of the package substrate and configured to emit deep ultraviolet light including a wavelength in a range of 250 nm to 285 nm; a reflector disposed on the first surface of the package substrate to surround the semiconductor ultraviolet light emitting device, and including an inclined sidewall that defines an opening of the reflector, the semiconductor ultraviolet light emitting device disposed within the opening; and a light transmitting cover including a lower surface covering the opening and an upper surface opposite to the lower surface, wherein an antireflective layer is disposed on at least one from among the lower surface and the upper surface.
Light emitting diode display device and method of manufacturing the same
A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.
Light emitting diode display device and method of manufacturing the same
A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.
Light blocking louver panel for an LED light display
A LED light display having a plurality of LED bulb arrays and a louver panel defining a plurality of hole arrays. Each hole array can define openings that are sized and spaced to receive at least the distal end portions of the bulbs forming a single LED bulb array. The louver panel further has a plurality of shaped protrusions in the form of louvers that are configured to extend outwardly and forwardly from a front surface of the louver panel and are arranged in a plurality of columns and in a plurality of rows in regularly repeating patterns related to the pattern of the placement of a plurality of the plurality of hole arrays in the louver panel and are further configured to block at least a portion of the emission of light from the LED bulbs in both a horizontal and vertical direction.
LEADFRAME, BRACKET AND LED DEVICE
Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.
LEADFRAME, BRACKET AND LED DEVICE
Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.