The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.

A UV LED package and an LED module including the same. The UV LED package includes an upper semiconductor layer; a mesa disposed under the upper semiconductor layer, having an inclined side surface, and comprising an active layer and a lower semiconductor layer; a first insulation layer covering the mesa and having an opening exposing the upper semiconductor layer; a first contact layer contacting the upper semiconductor layer through the opening of the first insulation layer; a second contact layer formed between the mesa and the first insulation layer and contacting the lower semiconductor layer; a first electrode pad and a second electrode pad disposed under the first contact layer and electrically connected to the first contact layer and second contact layer, respectively; and a second insulation layer located between the first contact layer and the first and second electrode pads, wherein the active layer emits UV light having a wavelength of 405 nm or less. With this structure, the LED package has high efficiency and high heat dissipation characteristics.

A lighting module (150) and a method (100) of manufacturing a lighting module, wherein the method comprises the steps of providing a heat sink material (120) in a fluid state and providing a light-source assembly (110) comprising a plurality of light sources (111) being electrically connected to a carrier (112), wherein each of the light sources has a light-emitting surface (113). The method further comprises the steps of embedding (130) the light-source assembly into the heat sink material such that the carrier and a part of each of the light sources are covered by the heat sink material while the light-emitting surface of each of the light sources is uncovered by the heat sink material, and solidifying (140) the heat sink material.

A package substrate and a manufacturing method thereof, and an OLED display device and a manufacturing method thereof are provided. The package substrate comprises a base substrate (1), the base substrate (1) includes a bonding region (11) for coating an adhesive. The package substrate further comprises a first barrier wall (2) located on the base substrate (1), and the first barrier wall (2) is arranged along an outer side edge of the bonding region (11).

The disclosed embodiments include an organopolysiloxane composition, a preparation method therefor, and a semiconductor component. The shore hardness of the cured product thereof is greater than A30 and less than A65. The composition comprises: (A1) solid 3D organopolysiloxane having an R.sup.1.sub.3SiO.sub.1/2 unit and an SiO.sub.4/2 unit; (A2) liquid straight-chain organopolysiloxane having an R.sup.1.sub.3SiO.sub.1/2 unit and an R.sup.2.sub.2SiO.sub.2/2 unit; the mixing viscosity of component (A1) and (A2) is between 6,000 and 20,000 mPa.Math.s; (B) liquid straight-chain polyorganohydrosiloxane having an R.sup.3.sub.3SiO.sub.1/2 unit and an R.sup.4.sub.2SiO.sub.2/2 unit; (C) an organosiloxane tackifier in which one molecule has on average at least one epoxy group; (D) a hydrosilylation catalyst of a volume enough to promote the curing of the composition. The composition of the present invention and the cured semiconductor component thereof have good heat resistance, good adhesiveness with aluminum having a mirror finish and ceramic substrate, and good resistance to humidity.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

A floating heat sink support with copper sheets for a LED flip chip package may include least two copper sheets and a flexible polymer for fixing the copper sheets, where the copper sheets separated from each other, and where each of the copper sheets is electrically connected with a positive or negative pole of a LED flip chip. Further, a LED package assembly may comprise the floating heat sink support as mentioned above and one or more LED chips welded in a flip chip manner on the floating heat sink support. A number of copper sheets in the floating heat sink support are heated separately and expand separately to avoid the breakage of a chip substrate resulting from the thermal expansion of a whole bulk of copper sheet, thereby improving the reliability of the LED package structure and prolonging the service life of a LED light source.

A light-emitting ceramic and a light-emitting device. The light-emitting ceramic comprises a YAG substrate and light-emitting centers and diffusion particles evenly dispersed in the YAG substrate. The light-emitting centers are lanthanide-doped YAG fluorescent powder particles of 10-20 μm in grain size. The particle size of the scattering particles is 20-50 nm. The YAG substrate is a lanthanide-doped YAG ceramic. Also, the grain size of the YAG substrate is less than the grain size of the YAG fluorescent powder particles.

A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.