A display device is provided. The display device incudes a circuit substrate including pixel circuit units, and pads electrically connected to the pixel circuit units, a display substrate above the circuit substrate, including light-emitting elements electrically connected to the pixel circuit units, and defining via holes in a peripheral area around a cell part where the light-emitting elements are located, a circuit board above the display substrate, and including circuit board pads electrically connected to the pads, a heat dissipation substrate below the circuit substrate, and pad connecting electrodes in the via holes, and connected to the pads of the circuit substrate and to the circuit board pads of the circuit board.

A display device and another display device are provided. The display device includes a substrate, multiple light emitting units, a first and a second structures. The light emitting units are disposed on the substrate and generate heat. The first structure is disposed on the substrate. The second structure is disposed outside of the substrate. The heat is transferred from the light emitting units to the second structure through the first structure. Another display device includes a substrate, multiple light emitting units, a first and a second structures. The light emitting units are disposed on the substrate and generate heat. The first structure is disposed on the substrate and transfers the heat. In a top view of another display device, an area of a portion of the first structure is greater than an area of a portion of the light emitting units in a predetermined square region of the substrate.

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A light emitting device includes a first semiconductor laser element, a light reflecting member, a base member, and a wire. The base member includes a frame part forming a frame. The frame part has a step portion inside of the frame, a bonding surface bonded to the bottom part, a first inner surface extending below the bonding surface, a second inner surface extending above the bonding surface, a first planar surface defining a planar surface of the step portion on an upper surface side, and a first electrode layer and a second electrode layer electrically connected to each other. The second electrode layer is disposed on the first planar surface. The wire is bonded to the second electrode layer and electrically connected to the first semiconductor laser element. A width of the bonding surface is greater on a first planar surface side than on an opposite side.

Panels of LED arrays and LED lighting systems are described. A panel includes a substrate having a top and a bottom surface. Multiple backplanes are embedded in the substrate, each having a top and a bottom surface. Multiple first electrically conductive structures extend at least from the top surface of each of the backplanes to the top surface of the substrate. Each of multiple LED arrays is electrically coupled to at least some of the first conductive structures. Multiple second conductive structures extend from each of the backplanes to at least the bottom surface of the substrate. At least some of the second electrically conductive structures are coupled to at least some of the first electrically conductive structures via the backplane. A thermal conductive structure is in contact with the bottom surface of each of the backplanes and extends to at least the bottom surface of the substrate.

A light emitting element includes: a semiconductor layered structure; a first electrically insulating film covering surfaces of the semiconductor layered structure and defining a first opening in each of a first region and a second region of a first semiconductor layer, and defining a second opening in a portion above a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer through each first opening; a second electrode electrically connected to the second semiconductor layer through the second opening; a first terminal located on the first electrode and electrically connected to the first electrode; a second terminal located on the second electrode and electrically connected to the second electrode; and a metal member located on a portion of the first electrically insulating film located over the second semiconductor layer and electrically insulated from the first terminal and the second terminal.

Methods of manufacture are described. A method includes forming a first cavity in a substrate and placing a backplane in the first cavity. At least one layer of dielectric material is formed over the substrate and the backplane. A second cavity is formed in the at least one layer of the dielectric material to expose at least a portion of a surface of the backplane. A heat conductive material is placed in the second cavity and in contact with the at least the portion of the surface of the backplane.

In an embodiment a component includes a semiconductor body, a converter layer, a filling layer and an intermediate layer arranged in a vertical direction between the semiconductor body and the converter layer, wherein the semiconductor body has a surface which faces the converter layer, is structured and has vertical recesses, wherein the vertical recesses are filled with a material of the filling layer that has a higher thermal conductivity than silicone, wherein the intermediate layer or the semiconductor body has a higher mechanical hardness than the filling layer, and wherein the structured surface of the semiconductor body has local elevations and local recesses, the structured surface including exclusively the surface of an n-type or a p-type semiconductor layer.

In an embodiment an optoelectronic semiconductor component includes a heat dissipating structure having a plurality of protrusions and a radiation emitting semiconductor chip, wherein the semiconductor chip is arranged at the heat dissipating structure, wherein at least some of the protrusions are arranged at a radiation exit side of the component, and wherein a height of at least some of the protrusions corresponds at least to a height of the semiconductor chip.

A light irradiator includes a light source, a heat-dissipating member thermally connected to the light source, a drive including a drive circuit for the light source, a housing having vents and an irradiation opening for light from the light source to pass, and a blower. The rectangular housing has a first surface having a first side with a first dimension and a second side with a second dimension, a second surface having the second side and a third side with a third dimension, and a third surface having the first and third sides. The opening is in the first surface. A first vent and a second vent are in the second surface, with the first vent nearer the opening, and the second vent opposite to the opening. The heat-dissipating member faces the first vent. The drive is between the first and second vents. The blower faces the second vent.