A light emitting apparatus includes: a module including a Peltier device with a first face opposite a second face, a supporting member with a principal surface, and a light emitting semiconductor device, and a package housing the module. The supporting member principal surface has a first area that supports the first face of the Peliter device, and a second area adjacent to the first area that supports the light emitting semiconductor device. The supporting member has a circuit board with different levels to which the Peliter device and the light emitting semiconductor device are connected.

A system and method of reducing chromatographic band broadening within a separation column include passing a mobile phase through a length of a separation column, and generating a spatial thermal gradient external to and along the length of the separation column. The spatial thermal gradient is specifically configured to counteract a particular change in a property of the mobile phase as the mobile phase passes through the separation column. For example, the particular change counteracted may be a change in density or in temperature of the mobile phase. For analytical-scale columns, for example, the spatial thermal gradient may be configured to produce temperatures external to and along the length of the separation column that substantially matches temperatures predicted to form in the mobile phase along the column length as the mobile phase passes through the separation column, thereby substantially preventing formation of a radial thermal gradient in the mobile phase.

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

A light emitter includes a substrate, a first mirror layer provided on the substrate, a columnar section including an active layer provided on a side of the first mirror layer that is the side opposite the substrate and a second mirror layer provided on a side of the active layer that is the side opposite the first mirror layer, a semi-insulating member provided on the side surface of the columnar section and having thermal conductivity higher than the thermal conductivity of the first mirror layer and the thermal conductivity of the second mirror layer, and a sub-mount which has a first surface bonded to the semi-insulating member and through which light produced in the active layer passes, and a second surface of the sub-mount that is the surface opposite the first surface is oriented in the direction in which the light produced in the active layer exits.

A photoelectric apparatus comprises a barrel-shaped container, an optical lens and a photoelectric imaging device arranged at two ends of the container, respectively. The container is filled with a light-transmitting and heat-conductive liquid. The heat-conductive liquid contains a plurality of nanostructures and particularly includes a plurality of nanorods. When an external voltage is applied between the photoelectric imaging device and the container, the nanorods are aligned with the electric field lines created by the external voltage, and form into nanorod chains. The nanorod chains link the photoelectric imaging device and the container, thereby increase the thermal conductivity of the heat-conductive liquid, and hence improve the heat dissipation efficiency of the photoelectric apparatus.

An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer. An electronic device has an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A white space region adjacent the electronic device includes a first P-type region in the semiconductor layer and adjacent the surface. The P-type region has a first sheet resistance and the NWELL region has a second sheet resistance that is greater than the first sheet resistance.

This disclosure provides a transfer printing template, including a transfer substrate, one surface of the substrate has a array of bulges, the bulge surface and gap between the bulges are covered with a colloid varying its viscosity with temperature change. This disclosure also provides a transfer printing device of LED, including a rack, the rack is provided with a standby platform and a transfer platform. A transfer mechanism is provided above the rack, can move between the two platforms and be vertically movable, the template is arranged on the mechanism, the bulges are disposed opposite to the two platforms. A device for heating the template is arranged on the mechanism, the template is fixed on the device by fasteners; a cooling device is provided in the transfer platform. Compared with the prior art, the transfer of LED by adjusting temperature can be achieved, is a simple structure and high efficiency.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

A light emitting apparatus includes: a module including a Peltier device with a first face and a second face, a supporting member with a principal surface, and a light emitting semiconductor device, the first face being opposite to the second face; and a package housing the module, the principal surface having a first area and a second area adjacent to the first area, the supporting member supporting the first face of the Peltier device on the first area of the principal surface, and the supporting member supporting the light emitting semiconductor device on the second area of the principal surface.

An illumination system includes: a light-emitting module including a blue LED light source that emits blue light having a light emission peak in a blue range of from 400 nm to 470 nm and a red LED light source that emits red light having a light emission peak in a red range of from 610 nm to 680 nm; a light regulator that controls a first light intensity, which is light intensity at the light emission peak in the blue range, and a second light intensity, which is light intensity at the light emission peak in the red range, in a light emission spectrum of light emitted by the light-emitting module; and a clock that measures a time. The light regulator causes the second light intensity to change in conjunction with a change in the first light intensity, in accordance with the time measured by the clock.