A thermoelectric conversion device includes: a base material; a thermoelectric conversion element in which an N-type semiconductor layer and a P-type semiconductor layer are stacked on a first surface side of the base material with insulating layers therebetween; and a heat transfer part thermally joined to the base material and passing through the thermoelectric conversion element in a thickness direction of the thermoelectric conversion element, wherein first end sides of the N-type semiconductor layers and the P-type semiconductor layers are thermally joined to the heat transfer part on a side of the thermoelectric conversion element facing the heat transfer part in a state where the N-type semiconductor layer and the P-type semiconductor layer are electrically insulated from the heat transfer part.

A heat dissipation module includes an airtight structure and a thermoelectric cooling element. The airtight structure includes a first workpiece, a second workpiece and a compressible element. The first workpiece has a first airtight portion having a plurality of first protrusions. The second workpiece configured in alignment with the first workpiece has a second airtight portion having a plurality of second protrusions. The compressible element is configured between the first airtight portion and the second airtight portion, wherein a part of the compressible element is located in gaps of the first protrusions and gaps of the second protrusions. The thermoelectric cooling element configured between the first workpiece and the second workpiece partially contacts the first workpiece, wherein the heating element is configured on a side of the first workpiece away from the thermoelectric cooling element.

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer. An electronic device has an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A white space region adjacent the electronic device includes a first P-type region in the semiconductor layer and adjacent the surface. The P-type region has a first sheet resistance and the NWELL region has a second sheet resistance that is greater than the first sheet resistance.

A light-emitting device includes: a resin package including: a lead part including a first lead and a second lead, each including a main body portion and a raised portion connected to the main body portion, wherein an upper surface of each of the first lead and the second lead includes a first primary surface portion in the main body portion and a curved portion in the raised portion in a cross-sectional view taken in a direction perpendicular to an upper surface of the lead part, and wherein the curved portion is continuous with and curved upward from an end portion of the first primary surface portion, a resin portion, and a recess defined by a portion of the upper surface of the lead part and the resin portion; and a light-emitting element mounted in the resin package. The curved portion is buried in the resin portion.

A temperature-stabilized LED irradiance system is provided. The system includes an LED. A temperature sensor is disposed to sense a temperature proximate the LED. Circuitry coupled to the temperature sensor and the LED, is configured to adjust power to the LED based on the sensed temperature.

An optical semiconductor component package includes a base, a frame, a lid, and a light absorbing member located on an inner surface of the lid. The base is plate-like and has a first surface including a mount area in which an optical semiconductor component is mountable. The frame is located on the first surface and surrounds the mount area. The lid is plate-like and is bonded to the frame and covers the mount area. The light absorbing member is located on a second surface of the lid facing the mount area, and has a plurality of recesses on its surface.

This disclosure provides a transfer printing template, including a transfer substrate, one surface of the substrate has a array of bulges, the bulge surface and gap between the bulges are covered with a colloid varying its viscosity with temperature change. This disclosure also provides a transfer printing device of LED, including a rack, the rack is provided with a standby platform and a transfer platform. A transfer mechanism is provided above the rack, can move between the two platforms and be vertically movable, the template is arranged on the mechanism, the bulges are disposed opposite to the two platforms. A device for heating the template is arranged on the mechanism, the template is fixed on the device by fasteners; a cooling device is provided in the transfer platform. Compared with the prior art, the transfer of LED by adjusting temperature can be achieved, is a simple structure and high efficiency.

A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.