The present disclosure provides a method of fabricating a semiconductor device. The method can include bonding a first die and a second die face to face, the first die including a substrate, transistors formed on a face side of the first die over a semiconductor layer with an insulating layer between the substrate and the semiconductor layer, and a first contact structure on the face side of the first die extending through the insulating layer. The method can also include exposing the first contact structure from the back side of the first die, forming, from the back side of the first die, a contact hole in the insulating layer to expose the semiconductor layer, and forming, on the back side of the first die, a first pad-out structure connected with the first contact structure and a second pad-out structure, on the contact hole, conductively connected with the semiconductor layer.

An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die and a second die boned face-to-face. The first die includes first transistors formed on a face side of the first die in a semiconductor portion and at least a contact structure disposed in an insulating portion outside the semiconductor portion. The second die includes a substrate and second transistors formed on a face side of the second die. Further, the semiconductor device includes a first pad structure disposed on a back side of the first die and the first pad structure is conductively coupled with the contact structure. An end of the contact structure protrudes from the insulating portion into the first pad structure. Further, in some embodiments, the semiconductor device includes a connection structure disposed on the back side of the first die and conductively connected with the semiconductor portion.

Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die and a second die boned face-to-face. The first die includes first transistors formed on a face side of the first die in a semiconductor portion and at least a contact structure disposed in an insulating portion outside the semiconductor portion. The second die includes a substrate and second transistors formed on a face side of the second die. Further, the semiconductor device includes a first pad structure disposed on a back side of the first die and the first pad structure is conductively coupled with the contact structure. An end of the contact structure protrudes from the insulating portion into the first pad structure. Further, in some embodiments, the semiconductor device includes a connection structure disposed on the back side of the first die and conductively connected with the semiconductor portion.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

A semiconductor device includes an insulating layer, a conductive member provided inside the insulating layer, a chip disposed on a first surface of the insulating layer and connected to the conductive member, and an electrode connected to the conductive member via a barrier layer. A resistivity of the barrier layer is higher than a resistivity of the conductive member. At least a portion of the electrode protrudes from a second surface of the insulating layer.

A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.