A semiconductor device including a substrate including a first conductive pad on a first surface thereof, at least one first bump structure on the first conductive pad, the first bump structure including a first connecting member and a first delamination prevention layer, the first delamination prevention layer on the first connecting member and having a greater hardness than the first connecting member, and a first encapsulant above the first surface of the substrate and surrounding the first bump structure may be provided.

A semiconductor device including a substrate including a first conductive pad on a first surface thereof, at least one first bump structure on the first conductive pad, the first bump structure including a first connecting member and a first delamination prevention layer, the first delamination prevention layer on the first connecting member and having a greater hardness than the first connecting member, and a first encapsulant above the first surface of the substrate and surrounding the first bump structure may be provided.

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, hybrid manufacturing refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.