In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

A display device comprises a first electrode, a first insulating layer disposed on the first electrode, a second electrode disposed on the first insulating layer, at least a part of the second electrode facing the first electrode in a first direction, one or more first light-emitting elements disposed between the first electrode and the second electrode, the one or more first light-emitting elements extending in a direction, wherein the first insulating layer partially encompasses the outer surface of the one or more first light-emitting element, and the extending direction of at least one of the one or more first light-emitting element is parallel to the first direction.

A display device comprises a first electrode, a first insulating layer disposed on the first electrode, a second electrode disposed on the first insulating layer, at least a part of the second electrode facing the first electrode in a first direction, one or more first light-emitting elements disposed between the first electrode and the second electrode, the one or more first light-emitting elements extending in a direction, wherein the first insulating layer partially encompasses the outer surface of the one or more first light-emitting element, and the extending direction of at least one of the one or more first light-emitting element is parallel to the first direction.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.