Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

A method of manufacturing a semiconductor device may include forming an adhesive film on a surface of a semiconductor chip, mounting the semiconductor chip on a substrate such that the adhesive film contacts an upper surface of the substrate, and bonding the semiconductor chip and the substrate curing the adhesive film by simultaneously performing a thermo-compression process and an ultraviolet irradiation process on the adhesive film disposed between the substrate and the semiconductor chip.

A method of manufacturing a semiconductor device may include forming an adhesive film on a surface of a semiconductor chip, mounting the semiconductor chip on a substrate such that the adhesive film contacts an upper surface of the substrate, and bonding the semiconductor chip and the substrate curing the adhesive film by simultaneously performing a thermo-compression process and an ultraviolet irradiation process on the adhesive film disposed between the substrate and the semiconductor chip.

Provided is a method of fabricating a semiconductor package. The method includes preparing a package substrate having a substrate pad, and mounting a semiconductor chip on the substrate pad. Mounting the semiconductor chip includes forming a resin layer containing a solder and reducing agent granules having a first capsule layer, between a chip pad of the semiconductor chip and the substrate pad, and bonding the chip pad to the substrate pad using laser irradiated to the semiconductor chip.

Provided is a method of fabricating a semiconductor package. The method includes preparing a package substrate having a substrate pad, and mounting a semiconductor chip on the substrate pad. Mounting the semiconductor chip includes forming a resin layer containing a solder and reducing agent granules having a first capsule layer, between a chip pad of the semiconductor chip and the substrate pad, and bonding the chip pad to the substrate pad using laser irradiated to the semiconductor chip.

A method for manufacturing connection structure, the method includes arranging a first composite on a first surface of a first member where a first electrode is located and arranging conductive particles on the first electrode, arranging a second composite on a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging a first composite on a first surface of a first member where a first electrode is located and arranging conductive particles on the first electrode, arranging a second composite on a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.